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公开(公告)号：US20220336672A1
公开(公告)日：2022-10-20
申请号：US17856202
申请日：2022-07-01
发明人： Min Hee CHO , Woo Bin SONG , Hyun Mog PARK , Min Woo SONG
IPC分类号： H01L29/786 , H01L29/417 , H01L29/04 , H01L29/45
摘要： A semiconductor device includes a substrate, an oxide semiconductor film on the substrate, a first gate structure on the oxide semiconductor film and a contact that is in contact with the oxide semiconductor film, the contact being disposed on a boundary surface with the oxide semiconductor film, and including a metal oxide film that includes a transition metal.
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公开(公告)号：US20210020781A1
公开(公告)日：2021-01-21
申请号：US16778114
申请日：2020-01-31
发明人： Min Hee CHO , Woo Bin SONG , Hyun Mog PARK , Min Woo SONG
IPC分类号： H01L29/786 , H01L29/45 , H01L29/04 , H01L29/417
摘要： A semiconductor device includes a substrate, an oxide semiconductor film on the substrate, a first gate structure on the oxide semiconductor film and a contact that is in contact with the oxide semiconductor film, the contact being disposed on a boundary surface with the oxide semiconductor film, and including a metal oxide film that includes a transition metal.
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公开(公告)号：US20200303523A1
公开(公告)日：2020-09-24
申请号：US16889899
申请日：2020-06-02
发明人： Dong Chan SUH , Sangmoon LEE , Yihwan KIM , Woo Bin SONG , Dongsuk SHIN , Seung Ryul LEE
IPC分类号： H01L29/66 , H01L21/28 , H01L29/786 , H01L29/423
摘要： A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.
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公开(公告)号：US20190067285A1
公开(公告)日：2019-02-28
申请号：US15939914
申请日：2018-03-29
发明人： Sangmoon LEE , Jungtaek KIM , Yihwan KIM , Woo Bin SONG , Dongsuk SHIN , Seung Ryul LEE
IPC分类号： H01L27/092 , H01L21/84 , H01L21/8238 , H01L29/66 , H01L29/78
摘要： A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; an active pattern spaced apart from the substrate and extending in a first direction; and a gate structure on the active pattern and extending in a second direction crossing the first direction, wherein a lower portion of the active pattern extends in the first direction and includes a first lower surface that is sloped with respect to an upper surface of the substrate.
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公开(公告)号：US20170373062A1
公开(公告)日：2017-12-28
申请号：US15494769
申请日：2017-04-24
发明人： Moon Seung Yang , Dong Chan SUH , Chul KIM , Woo Bin SONG , Ji Eon YOON , Seung Ryul LEE
IPC分类号： H01L27/092 , H01L29/06 , H01L29/10 , H01L29/78
摘要： The semiconductor device includes a first multi-channel active pattern protruding from a substrate, and having a first height, a second multi-channel active pattern on the substrate, being spaced apart from the substrate, and having a second height that is less than the first height, and a gate electrode on the substrate, intersecting the first multi-channel active pattern and the second multi-channel active pattern.
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公开(公告)号：US20230269501A1
公开(公告)日：2023-08-24
申请号：US18086449
申请日：2022-12-21
发明人： Jeong Soon KANG , Hyun Cheol KIM , Woo Bin SONG , Kyung Hwan LEE
IPC分类号： H04N25/77 , H04N25/709
CPC分类号： H04N25/77 , H04N25/709
摘要： An image sensor includes a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node, a transfer transistor configured to provide a voltage of the first node to a floating diffusion node, a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal, a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node, a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside, and a ferroelectric capacitor connected to the floating diffusion node, wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third conversion gain mode.
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公开(公告)号：US20190370429A1
公开(公告)日：2019-12-05
申请号：US16266143
申请日：2019-02-04
发明人： Dong Chan SUH , Mann-Ho CHO , Woo Bin SONG , Kwang Sik JEONG
IPC分类号： G06F17/50 , H01L21/265 , H01L21/66
摘要： A method for manufacturing a semiconductor device with an improved doping profile is provided. The method includes providing a measuring target including a first region having a plurality of layers, inputting a first input signal into the measuring target and measuring a resulting first output signal, such as a change over time of a first output electric field that is transmitted through or reflected by the first region. Based on a first model including first structural information of a plurality of first modeling layers and information on doping concentrations of each of the plurality of first modeling layers, calculating a second output signal. When a result of comparing the first output signal with the second output signal is smaller than a threshold value, a three-dimensional model of the measuring target may be estimated based on the first model. Such non-destructive measurements may be used to determine manufacturing process parameters corresponding to ideal doping profiles and used to manufacture semiconductor devices implementing such manufacturing process parameters.
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公开(公告)号：US20190081160A1
公开(公告)日：2019-03-14
申请号：US15956166
申请日：2018-04-18
发明人： Dong Chan SUH , Sangmoon LEE , Yihwan KIM , Woo Bin SONG , Dongsuk SHIN , Seung Ryul LEE
摘要： A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.
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