OPTOELECTRONIC DEVICE INCLUDING QUANTUM DOT

    公开(公告)号:US20170117496A1

    公开(公告)日:2017-04-27

    申请号:US15091650

    申请日:2016-04-06

    Abstract: Provided are optoelectronic devices including quantum dots. An optoelectronic device may include an active layer including a quantum dot and at least one molecular interlayer adjacent to the active layer. The active layer may be provided between two electrodes, and a charge transfer layer may be provided adjacent to the active layer. The molecular interlayer may be provided between the active layer and the charge transfer layer. The molecular interlayer may have a smaller amount of surface charge than the charge transfer layer. The molecular interlayer may include a nonionic material or a hydrophobic material. The charge transfer layer may include an electron transport layer, and the electron transport layer may include an inorganic semiconductor.

    OPTOELECTRIC DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME

    公开(公告)号:US20250063840A1

    公开(公告)日:2025-02-20

    申请号:US18937962

    申请日:2024-11-05

    Abstract: Provided is an image sensor including a sensor array including a plurality of light-sensors respectively including an optoelectronic device, the optoelectronic device including a first electrode, a second electrode spaced apart from the first electrode, and an active layer provided between the first electrode and the second electrode, the active layer including a plurality of quantum dot layers having different energy bands, and a circuit including circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.

    OPTOELECTRIC DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME

    公开(公告)号:US20230028578A1

    公开(公告)日:2023-01-26

    申请号:US17580145

    申请日:2022-01-20

    Abstract: Provided is an image sensor including a sensor array including a plurality of light-sensors respectively including an optoelectronic device, the optoelectronic device including a first electrode, a second electrode spaced apart from the first electrode, and an active layer provided between the first electrode and the second electrode, the active layer including a plurality of quantum dot layers having different energy bands, and a circuit including circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.

    OPTO-ELECTRONIC DEVICE HAVING JUNCTION FIELD-EFFECT TRANSISTOR STRUCTURE AND IMAGE SENSOR INCLUDING THE OPTO-ELECTRONIC DEVICE

    公开(公告)号:US20210249465A1

    公开(公告)日:2021-08-12

    申请号:US16930574

    申请日:2020-07-16

    Abstract: Provided is an opto-electronic device having low dark noise and a high signal-to-noise ratio. The opto-electronic device may include: a first semiconductor layer doped to have a first conductivity type; a second semiconductor layer disposed on an upper surface of the first semiconductor layer and doped to have a second conductivity type electrically opposite to the first conductivity type; a transparent matrix layer disposed on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.

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