SCHOTTKY BARRIER PHOTODETECTOR
    7.
    发明公开

    公开(公告)号:US20240243215A1

    公开(公告)日:2024-07-18

    申请号:US18211873

    申请日:2023-06-20

    Inventor: Chanwook BAIK

    CPC classification number: H01L31/108 H01L31/032 H01L27/14645

    Abstract: A photodetector, including: a semiconductor layer, a conductive layer forming a Schottky junction with the semiconductor layer, and a tunneling barrier layer between the semiconductor layer and the conductive layer, wherein the tunneling barrier layer may be configured to block a dark current between the semiconductor layer and the conductive layer.

    PHOTODIODE AND ELECTRONIC DEVICE INCLUDING THE SAME

    公开(公告)号:US20230128236A1

    公开(公告)日:2023-04-27

    申请号:US17896534

    申请日:2022-08-26

    Inventor: Chanwook BAIK

    Abstract: A photodiode includes: a semiconductor layer; a first conductive layer on the semiconductor layer and including a transparent conductive oxide; and a second conductive layer arranged between the semiconductor layer and the first conductive layer, having a work function different from a work function of the first conductive layer, and forming a Schottky junction structure with the semiconductor layer. The work function of the second conductive layer is set to lower the Schottky-barrier height, so that light in a wide wavelength band may be sensed.

Patent Agency Ranking