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1.发明申请ELECTROLYTE, METHOD OF PREPARING THE ELECTROLYTE, AND LITHIUM SECONDARY BATTERY COMPRISING THE ELECTROLYTE 审中-公开电解质，电解质的制备方法和包含电解质的锂二次电池公开(公告)号：US20160087306A1
公开(公告)日：2016-03-24
申请号：US14855657
申请日：2015-09-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yonggun LEE , Yooseong YANG , Hongsoo CHOI , Jenam LEE , Wonseok CHANG
IPC: H01M10/0565 , H01M10/0525
CPC classification number: H01M10/0565 , H01M10/052 , H01M10/0525 , H01M2300/0082
Abstract: An electrolyte including a copolymer including (i) an ion-conductive domain including an ion-conductive segment of the copolymer, wherein the ion-conductive segment includes a plurality of ion-conductive units, and (ii) a structural domain including a structural segment of the copolymer, wherein the structural segment includes a plurality of structural units, wherein the ion-conductive domain and the structural domain are covalently linked, and a polymer network phase coupled to the ion-conductive domain.
Abstract translation: 1.一种包含共聚物的电解质，其包含（i）包含所述共聚物的离子传导性区段的离子传导区域，其中所述离子传导区段包括多个离子传导单元，和（ii）包含结构区段 的共聚物，其中所述结构片段包括多个结构单元，其中所述离子传导结构域和结构域共价连接，以及耦合到所述离子传导结构域的聚合物网络相。
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公开(公告)号：US20250011648A1
公开(公告)日：2025-01-09
申请号：US18887277
申请日：2024-09-17
Inventor： Kyungsang CHO , Sohee JEONG , Taewan KIM , Yooseong YANG , Seongmin PARK
Abstract: According to an aspect, a method of preparing quantum dots includes a first operation of preparing a quantum dot seed solution; a second operation of growing a quantum dot by continuously injecting a quantum dot cluster solution into the quantum dot seed solution; a third operation of separating the grown quantum dot and dispersing the quantum dot in a solvent; and a fourth operation of further growing the quantum dot by continuously injecting the quantum dot cluster solution into the dispersed quantum dot.
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3.发明申请NEGATIVE ELECTRODE FOR LITHIUM BATTERY AND LITHIUM BATTERY COMPRISING THE SAME 审中-公开用于锂电池的负极和包含该电池的锂电池公开(公告)号：US20160329567A1
公开(公告)日：2016-11-10
申请号：US14875951
申请日：2015-10-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yonggun LEE , Toshinori SUGIMOTO , Yooseong YANG , Wonseok CHANG , Hongsoo CHOI
IPC: H01M4/62 , H01M10/052 , H01M4/38 , H01M10/0564
CPC classification number: H01M4/628 , H01M4/134 , H01M4/366 , H01M4/382 , H01M4/405 , H01M10/052 , H01M10/0569 , H01M2004/027 , H01M2300/0028 , Y02T10/7011
Abstract: A negative electrode for a lithium battery, including a lithium metal; and a protective layer disposed on at least a part of the lithium metal, wherein the protective layer includes a block copolymer including a structural domain and a hard domain covalently linked to the structural domain, wherein the structural domain includes a structural block of the block copolymer, wherein the hard domain includes a hard block of the block polymer, wherein the structural block includes a plurality of structural repeating units, and wherein the hard block includes a plurality of olefin repeating units.
Abstract translation: 一种用于锂电池的负极，包括锂金属; 以及设置在所述锂金属的至少一部分上的保护层，其中所述保护层包括嵌段共聚物，所述嵌段共聚物包含与所述结构域共价连接的结构域和硬畴，其中所述结构域包括所述嵌段共聚物的结构嵌段 其中所述硬畴包括所述嵌段聚合物的硬嵌段，其中所述结构嵌段包括多个结构重复单元，并且其中所述硬嵌段包括多个烯烃重复单元。
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公开(公告)号：US20230124189A1
公开(公告)日：2023-04-20
申请号：US17737183
申请日：2022-05-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Byungkyu LEE , Jinmyoung KIM , Byonggwon SONG , Yooseong YANG , Duhyun LEE , Hyuck CHOO
Abstract: Provided is a long-wave infrared (LWIR) sensor including a substrate, a magnetic resistance device on the substrate, and an LWIR absorption layer on the magnetic resistance device, wherein a resistance of the magnetic resistance device changes based on temperature, and wherein the LWIR absorption layer is configured to absorb LWIR rays and generate heat.
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公开(公告)号：US20230111183A1
公开(公告)日：2023-04-13
申请号：US17724124
申请日：2022-04-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Duhyun LEE , Jinmyoung KIM , Byonggwon SONG , Yooseong YANG , Byungkyu LEE
IPC: G02B26/06 , H01L23/00 , H01L27/146 , G02B26/02
Abstract: A window assembly includes a transparent window layer and a first coded mask layer provided on a first surface of the window layer, the first coded mask layer having a first shape configured to change a first property of light passing through the window assembly. The first coded mask layer may include a meta-surface including a phase modulation meta-pattern. The meta-surface may further include an amplitude modulation meta-pattern. A second coded mask layer having a second shape configured to change a second property of the light passing through the window assembly may further be provided on a second surface of the window layer.
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Patent Agency Ranking
公开(公告)号：US20250063840A1
公开(公告)日：2025-02-20
申请号：US18937962
申请日：2024-11-05
Applicant: SAMSUNG ELECTRONICS CO.,LTD.
Inventor： Kyungsang CHO , Hojung KIM , Chanwook BAIK , Yooseong YANG
IPC: H01L27/146 , B82Y20/00
Abstract: Provided is an image sensor including a sensor array including a plurality of light-sensors respectively including an optoelectronic device, the optoelectronic device including a first electrode, a second electrode spaced apart from the first electrode, and an active layer provided between the first electrode and the second electrode, the active layer including a plurality of quantum dot layers having different energy bands, and a circuit including circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.
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公开(公告)号：US20230028578A1
公开(公告)日：2023-01-26
申请号：US17580145
申请日：2022-01-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungsang CHO , Hojung KIM , Chanwook BAIK , Yooseong YANG
IPC: H01L27/146
Abstract: Provided is an image sensor including a sensor array including a plurality of light-sensors respectively including an optoelectronic device, the optoelectronic device including a first electrode, a second electrode spaced apart from the first electrode, and an active layer provided between the first electrode and the second electrode, the active layer including a plurality of quantum dot layers having different energy bands, and a circuit including circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.
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公开(公告)号：US20240243216A1
公开(公告)日：2024-07-18
申请号：US18413897
申请日：2024-01-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungsang CHO , Chanwook BAIK , Yooseong YANG
IPC: H01L31/113 , H01L31/028 , H01L31/18
CPC classification number: H01L31/1136 , H01L31/028 , H01L31/1808
Abstract: A light sensing device includes a channel layer, a first electrode provided on a first surface of the channel layer, a second electrode provided on the first surface of the channel layer and spaced apart from the first electrode, and a light absorption layer provided on the channel layer between the first electrode and the second electrode and configured to absorb infrared rays, where the light absorption layer includes a doped semiconductor layer.
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公开(公告)号：US20230213390A1
公开(公告)日：2023-07-06
申请号：US17836568
申请日：2022-06-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinmyoung KIM , Byonggwon SONG , Yooseong YANG , Duhyun LEE , Byungkyu LEE
CPC classification number: G01J5/20 , G01J5/58 , G01J2005/202
Abstract: A long wavelength infrared sensor includes a first magnetoresistive unit; a second magnetoresistive unit; and a light absorption layer that absorbs light and emits heat, wherein the first magnetoresistive unit includes a first magnetoresistive element and a second magnetoresistive element electrically connected to each other, the second magnetoresistive unit includes a third magnetoresistive element and a fourth magnetoresistive element electrically connected to each other, the first and third magnetoresistive elements each have an antiparallel state of magnetization direction, the second and fourth magnetoresistive elements each have a parallel state of magnetization direction, and the first magnetoresistive element is electrically connected to the third magnetoresistive element by way of the second magnetoresistive element.
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公开(公告)号：US20220298414A1
公开(公告)日：2022-09-22
申请号：US17571738
申请日：2022-01-10
Inventor： Kyungsang CHO , Sohee JEONG , Taewan KIM , Yooseong YANG , Seongmin PARK
Abstract: According to an aspect, a method of preparing quantum dots includes a first operation of preparing a quantum dot seed solution; a second operation of growing a quantum dot by continuously injecting a quantum dot cluster solution into the quantum dot seed solution; a third operation of separating the grown quantum dot and dispersing the quantum dot in a solvent; and a fourth operation of further growing the quantum dot by continuously injecting the quantum dot cluster solution into the dispersed quantum dot.
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