公开(公告)号：US09947399B2

公开(公告)日：2018-04-17

申请号：US14669731

申请日：2015-03-26

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ariel Navon ,  Idan Alrod ,  Eran Sharon ,  Idan Goldenberg ,  Didi Gur

IPC: G06F11/10 ,  G11C13/00 ,  G11C29/52

CPC classification number: G11C13/0069 ,  G06F11/1048 ,  G06F11/1056 ,  G06F11/1068 ,  G11C13/0033 ,  G11C13/004 ,  G11C13/0097 ,  G11C29/52 ,  G11C2013/0076 ,  G11C2013/0085

Abstract: Data is initially programmed in a portion of ReRAM in parallel. Subsequently, one or more ReRAM cells in the portion are determined to contain first data that is to be modified while remaining ReRAM cells in the portion contain second data that is not to be modified. First conditions are applied to the one or more ReRAM cells thereby modifying the first data, while second conditions are applied to the remaining ReRAM cells, the second conditions maintaining the second data in the remaining ReRAM cells without significant change.