公开(公告)号：US10211215B1

公开(公告)日：2019-02-19

申请号：US15895102

申请日：2018-02-13

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yashushi Ishii ,  Kazuto Watanabe ,  Michiaki Sano ,  Haruki Urata ,  Akira Takahashi ,  Tae-Kyung Kim

IPC: H01L27/11556 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/522 ,  H01L27/11597 ,  H01L27/28 ,  H01L27/11529 ,  H01L27/105 ,  H01L27/11578 ,  H01L27/11551 ,  H01L27/11514 ,  H01L45/00

Abstract: An alternating stack of insulating layers and spacer material layers is formed over a substrate. Each of the first insulating layers and the first sacrificial material layers includes a respective horizontally-extending portion and a respective non-horizontally-extending portion. Memory stack structures are formed through the horizontally-extending portions of the alternating stack. Regions of the non-horizontally-extending portions of the sacrificial material layers are masked with patterned etch mask portions. Unmasked first regions of the non-horizontally-extending portions of the first sacrificial material layers are selectively recessed, and the sacrificial material layers with electrically conductive layers. Each electrically conductive layer can include a vertical plate region and a protrusion region that protrudes above the vertical plate region and having a narrower lateral dimension that the vertical plate region. Metal contact structures can be formed on the protrusion regions without contacting the vertical plate regions.

公开(公告)号：US10217746B1

公开(公告)日：2019-02-26

申请号：US15867881

申请日：2018-01-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Tae-Kyung Kim ,  Raghuveer S. Makala ,  Yanli Zhang ,  Hiroyuki Kinoshita ,  Daxin Mao ,  Jixin Yu ,  Yiyang Gong ,  Kazuto Watanabe ,  Michiaki Sano ,  Haruki Urata ,  Akira Takahashi

IPC: H01L27/105 ,  H01L21/768 ,  H01L27/24 ,  H01L23/535 ,  H01L45/00

Abstract: A three-dimensional memory device includes a first alternating stack of first insulating layers and first electrically conductive layers located over a top surface of a substrate, such that each of the first insulating layers and the first electrically conductive layers includes a respective horizontally-extending portion and a respective non-horizontally-extending portion, memory stack structures extending through a memory array region of the first alternating stack that includes the horizontally-extending portions of the first electrically conductive layers, such that each of the memory stack structures comprises a memory film and a vertical semiconductor channel, a mesa structure located over the substrate, such that each respective non-horizontally-extending portion of the first insulating layers and the first electrically conductive layers is located over a sidewall of the mesa structure, and contact structures that contact a respective one of the non-horizontally-extending portions of the first electrically conductive layers.

公开(公告)号：US10181442B1

公开(公告)日：2019-01-15

申请号：US15826796

申请日：2017-11-30

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Kazuto Watanabe ,  Michiaki Sano ,  Haruki Urata ,  Akira Takahashi

IPC: H01L27/1157 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11582 ,  H01L27/11519 ,  H01L27/11529 ,  H01L23/528 ,  H01L27/11524 ,  H01L27/11556 ,  H01L21/768 ,  H01L23/522 ,  H01L21/28 ,  H01L27/11514 ,  H01L27/06 ,  H01L27/11578

Abstract: A three-dimensional memory device includes an alternating stack of L-shaped insulating layers and L-shaped electrically conductive layers located over a top surface of a substrate, such that each of the L-shaped insulating layers and the L-shaped electrically conductive layers includes a respective horizontally-extending portion and a respective non-horizontally-extending portion, memory stack structures extending through a memory array region of the alternating stack that includes the horizontally-extending portions of the L-shaped electrically conductive layers, such that each of the memory stack structures includes a memory film and a vertical semiconductor channel, dielectric spacers non-horizontally extending between neighboring pairs of a non-horizontally-extending portion of an L-shaped insulating layer and a non-horizontally-extending portion of an L-shaped electrically conductive layer, and contact via structures that contact a respective one of the non-horizontally-extending portions of the L-shaped electrically conductive layers.