公开(公告)号：US20230408194A1

公开(公告)日：2023-12-21

申请号：US18205525

申请日：2023-06-03

Applicant: SEMES CO., LTD.

Inventor： Haewon Choi

IPC: F26B5/00

CPC classification number: F26B5/005 ,  H01L21/67034

Abstract: A substrate processing apparatus includes a body having a processing space configured to pressurize a drying process fluid at a supercritical pressure therein, a fluid supply unit configured to supply the drying process fluid to the processing space, and a discharge unit configured to discharge the drying process fluid from inside the processing space, wherein the discharge unit includes a discharge line coupled to the body, and a sampling unit including a sampling line branched from a rear end area of the discharge line and configured to extract a sampling fluid, and a detector arranged in the sampling line and configured to analyze the sampling fluid.

公开(公告)号：US20240064967A1

公开(公告)日：2024-02-22

申请号：US18206490

申请日：2023-06-06

Applicant: SEMES CO., LTD.

Inventor： Chengyeh Hsu ,  Thomas Jongwan Kwon ,  Yunsang Kim ,  Haewon Choi

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/488 ,  H10B12/315

Abstract: A semiconductor device includes bit lines each extending in a first direction on a substrate and spaced apart from each other in a second direction, semiconductor patterns disposed on each of the bit lines and including a first semiconductor pattern disposed on a first bit line, and a second semiconductor pattern arranged to be offset in the second direction from the first semiconductor pattern on the first bit line, word lines each extending in the second direction and surrounding a sidewall of each of the semiconductor patterns, the word lines including a first word line extending in the second direction and surrounding the first semiconductor pattern, and a second word line spaced apart in the first direction from the first word line and extending in the second direction while surrounding the second semiconductor pattern, and storage nodes respectively disposed on the semiconductor patterns.

公开(公告)号：US20230369081A1

公开(公告)日：2023-11-16

申请号：US18197677

申请日：2023-05-15

Applicant: SEMES CO., LTD.

Inventor： Haewon Choi ,  Anton Koriakin ,  Joonho Won ,  Hyungseok Kang ,  Minwoo Kim

IPC: H01L21/67 ,  H01L21/475

CPC classification number: H01L21/6715 ,  H01L21/6704 ,  H01L21/475 ,  H01L21/67167

Abstract: Provided is an apparatus for processing a substrate, the apparatus including: a processing chamber configured to provide a processing space; a fluid supply device configured to supply a supercritical fluid to the processing chamber; a fluid discharge device configured to discharge the supercritical fluid from the processing chamber; and a control device configured to control operations of the fluid supply device and the fluid discharge device, wherein the fluid supply device includes a first supply line connected to an upper portion of the processing chamber and a second supply line connected to a lower portion of the processing chamber, and the control device is configured to perform a plurality of first cycles in which the supercritical fluid is alternately supplied into the processing space through the first supply line and the second supply line to boost pressure in the processing space to a set pressure.