公开(公告)号：US11594421B2

公开(公告)日：2023-02-28

申请号：US17030514

申请日：2020-09-24

Applicant: SEMES CO., LTD.

Inventor： Youngil Lee ,  Jungbong Choi ,  Seungho Lee ,  Gui Su Park ,  Gil Hun Song ,  Seung Hoon Oh ,  Jonghan Kim

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01L21/306 ,  H01L21/687

Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.

公开(公告)号：US10083840B2

公开(公告)日：2018-09-25

申请号：US15166562

申请日：2016-05-27

Applicant: SEMES CO., LTD.

Inventor： Seungho Lee ,  Minhee Cho ,  Ki-Moon Kang ,  Tae-Keun Kim

IPC: H01L21/311 ,  H01L21/67 ,  B01D11/04 ,  B01D1/00 ,  C09K13/08

Abstract: Disclosed is a method of regenerating a phosphoric acid solution from a treatment liquid including silicon (Si), hydrogen fluoride (HF), and phosphoric acid, the method including removing the silicon by supplying hydrogen fluoride corresponding to a preset amount or more to the treatment liquid, removing the hydrogen fluoride by heating the treatment liquid to a boiling point of hydrogen fluoride or higher, and adjusting a temperature and a concentration of the phosphoric acid to preset values.

公开(公告)号：US10049888B2

公开(公告)日：2018-08-14

申请号：US15166562

申请日：2016-05-27

Applicant: SEMES CO., LTD.

Inventor： Seungho Lee ,  Minhee Cho ,  Ki-Moon Kang ,  Tae-Keun Kim

IPC: H01L21/311 ,  H01L21/67 ,  B01D11/04 ,  B01D1/00 ,  C09K13/08

Abstract: Disclosed is a method of regenerating a phosphoric acid solution from a treatment liquid including silicon (Si), hydrogen fluoride (HF), and phosphoric acid, the method including removing the silicon by supplying hydrogen fluoride corresponding to a preset amount or more to the treatment liquid, removing the hydrogen fluoride by heating the treatment liquid to a boiling point of hydrogen fluoride or higher, and adjusting a temperature and a concentration of the phosphoric acid to preset values.