公开(公告)号：US12278121B2

公开(公告)日：2025-04-15

申请号：US16986418

申请日：2020-08-06

Applicant: SEMES CO., LTD.

Inventor： Kangseop Yun ,  Seung Hoon Oh ,  Ye Jin Choi ,  Youngil Lee ,  Byungsun Bang ,  Jungbong Choi ,  Gui Su Park

IPC: H01L21/67 ,  H01L21/687

Abstract: The inventive concept provides a support unit for supporting a substrate. The support unit includes a support plate that has an interior space and on which the substrate is placed, a heating member that is provided in the interior space and that heats the substrate placed on the support plate, a heat insulating plate provided in the interior space and disposed under the heating member, a reflective plate provided in the interior space and disposed under the heat insulating plate, and a heat dissipation plate provided in the interior space and disposed under the a reflective plate.

公开(公告)号：US11765793B2

公开(公告)日：2023-09-19

申请号：US16932286

申请日：2020-07-17

Applicant: SEMES CO., LTD.

Inventor： Muhyeon Lee ,  Gui Su Park ,  Byungsun Bang ,  Jungbong Choi ,  Youngil Lee ,  Kangseop Yun ,  Seung Eun Na ,  Ye Jin Choi ,  Kyounghwan Kim

IPC: H05B3/06 ,  H01L21/683 ,  H01L21/67 ,  H05B3/00 ,  H01L21/687

CPC classification number: H05B3/0047 ,  H01L21/6708 ,  H01L21/683 ,  H01L21/68714 ,  H05B3/06 ,  H01L21/67 ,  H01L21/67005 ,  H01L21/67115

Abstract: An apparatus for treating a substrate includes a process chamber having a treatment space defined therein, a support unit for supporting the substrate in the treatment space, a liquid supply unit for supplying treating liquid to the substrate supported on the support unit, and a heating unit disposed in the support unit for heating the substrate supported on the support unit, wherein the heating unit includes a plurality of lamps to heat the substrate, and a window disposed above the lamps to transmit light emitted from the lamps, wherein the window includes a base in a form of a plate, and light adjustment means formed on the base to spread or converge light emitted from the lamps.

公开(公告)号：US20210066077A1

公开(公告)日：2021-03-04

申请号：US17004079

申请日：2020-08-27

Applicant: SEMES CO., LTD.

Inventor： Byungsun Bang ,  Youngil Lee

IPC: H01L21/02 ,  H01L21/67

Abstract: The inventive concept relates to a method for treating a substrate. In an embodiment, a method for etching a substrate having a silicon nitride layer includes etching the silicon nitride layer by dispensing a first treatment liquid having a set temperature and a set concentration onto the substrate heated to a set temperature, in which a second treatment liquid is additionally dispensed for a set period of time in an overlapping manner while the first treatment liquid is dispensed in the silicon nitride layer etching process.

公开(公告)号：US20180337070A1

公开(公告)日：2018-11-22

申请号：US15979956

申请日：2018-05-15

Applicant: SEMES CO., LTD.

Inventor： Byungsun Bang ,  Buyoung Jung ,  Jungbong Choi ,  Bong Joo Kim ,  Youngil Lee ,  Gil Hun Song ,  Gui Su Park ,  Kwang Ryul Kim ,  Kwang-Seop Lee ,  Jin Tack Yu

IPC: H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  B08B3/04 ,  B08B3/08 ,  B08B7/04 ,  C03C23/00 ,  B23K26/402

CPC classification number: H01L21/67028 ,  B08B3/041 ,  B08B3/08 ,  B08B7/0042 ,  B08B7/04 ,  B23K26/402 ,  C03C23/0025 ,  H01L21/0206 ,  H01L21/0217

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating method includes removing a portion of the thin film by irradiating a laser to the substrate, and after the removing of the portion of the thin film, removing the remaining portion of the thin film by supplying a chemical to the substrate.

公开(公告)号：US11961748B2

公开(公告)日：2024-04-16

申请号：US17380339

申请日：2021-07-20

Applicant: SEMES CO., LTD.

Inventor： Kangseop Yun ,  Youngil Lee ,  Jungbong Choi

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67115 ,  H01L21/6708 ,  H01L21/68714

Abstract: A support unit for supporting a substrate includes a heating member and a reflector, and the reflector includes a curved surface that reflects thermal energy generated by the heating member toward an edge region of the substrate.

公开(公告)号：US11594421B2

公开(公告)日：2023-02-28

申请号：US17030514

申请日：2020-09-24

Applicant: SEMES CO., LTD.

Inventor： Youngil Lee ,  Jungbong Choi ,  Seungho Lee ,  Gui Su Park ,  Gil Hun Song ,  Seung Hoon Oh ,  Jonghan Kim

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01L21/306 ,  H01L21/687

Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.