公开(公告)号：US11193850B2

公开(公告)日：2021-12-07

申请号：US16587737

申请日：2019-09-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Masataka Yokoi ,  Nobuo Kobayashi ,  Masaaki Furuya ,  Atsushi Kinase

IPC: G01M3/28 ,  H05B3/06 ,  G01M3/00

Abstract: A gas leak detecting device of a heater pipe and a gas leak detecting method of a heater pipe, which are able to reliably detect a leak of gas from a heater pipe in which a fine hole is formed. A gas leak detecting device of a heater pipe, which is provided with an inside pipe housing a heater element and an outside pipe sealed surrounding the inside pipe and which is adjusted by a pressure adjustment mechanism in gas pressure in a space between the outside pipe and the inside pipe to a predetermined pressure value. The gas leak detecting device includes a gas flow resistance part, a pressure detection unit, and a leak judging device that judges whether gas is leaking from the heater pipe based on a detected pressure value obtained by the pressure detection unit.

公开(公告)号：US10573540B2

公开(公告)日：2020-02-25

申请号：US15468577

申请日：2017-03-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Nobuo Kobayashi ,  Takeki Kogawa ,  Katsuhiro Yamazaki ,  Yuki Saito

IPC: H01L21/67 ,  H01L21/306

Abstract: According to one embodiment, a substrate processing apparatus includes a tank that stores a treatment liquid; a liquid level pipe connected to the tank such that the treatment liquid stored in the tank flows therein, and configured such that the liquid level of the treatment liquid therein moves according to increase and decrease of the treatment liquid in the tank; a liquid level sensor that detects the liquid level in the liquid level pipe; an air supply pipe for supplying a gas to a piping space above the liquid level in the liquid level pipe; and a controller that determines whether there is erroneous detection of the liquid level sensor based on a detection result obtained by the liquid level sensor in response to the movement of the liquid level in the liquid level pipe caused by supply of the gas to the piping space from the air supply pipe.

公开(公告)号：US10026760B2

公开(公告)日：2018-07-17

申请号：US14777694

申请日：2014-03-17

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Koichi Hamada ,  Nobuo Kobayashi

IPC: B08B3/04 ,  H01L27/12 ,  H01L21/67 ,  B08B3/02 ,  B08B3/08 ,  B08B3/10 ,  H01L21/02 ,  H01L21/687 ,  B08B3/00

Abstract: According to one embodiment, a substrate processing apparatus (1) includes: a support (4) configured to support a substrate (W); a rotation mechanism (5) configured to rotate the support (4) about an axis that crosses the substrate (W) supported by the support (4) as a rotation axis; a nozzle (6) configured to supply a treatment liquid to a surface of the substrate (W) on the support (4) being rotated by the rotation mechanism (5); a heater (8) configured to heat the substrate (W) supported by the support (4) at a distance from the substrate (W); and a movement mechanism (9) configured to move the heater (8) in directions toward and away from the substrate (W) supported by the support (4).

公开(公告)号：US10804121B2

公开(公告)日：2020-10-13

申请号：US15441709

申请日：2017-02-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Koichi Hamada ,  Nobuo Kobayashi

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/306 ,  G02F1/13

Abstract: According to an embodiment, a substrate treatment apparatus includes, a substrate support unit supporting a substrate, a rotary unit rotating the substrate, a treatment liquid supply unit supplying treatment liquid to a surface of the substrate, and a controller performing liquid discharge treatment to change liquid discharge velocity at which the treatment liquid is discharged from the substrate, at preset predetermined timing, during substrate treatment in which the treatment liquid is supplied while the substrate is rotated, with the treatment continued.

公开(公告)号：US10319602B2

公开(公告)日：2019-06-11

申请号：US14490939

申请日：2014-09-19

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Nobuo Kobayashi ,  Koichi Hamada ,  Yoshiaki Kurokawa ,  Masaaki Furuya ,  Hideki Mori ,  Yasushi Watanabe ,  Yoshinori Hayashi

IPC: H01L21/311 ,  B05C3/02 ,  H01L21/67

Abstract: A substrate treatment apparatus which can more efficiently regenerate phosphoric acid which is able to be returned to etching treatment along with such etching treatment as much as possible without using a large facility, that is, a substrate treatment apparatus which treats a silicon substrate W on which a nitride film is formed by a liquid etchant which contains phosphoric acid, which comprises an etching treatment unit (the spin treatment unit 30) which gives a suitable quantity of liquid etchant to each substrate which is fed one at a time so as to etch the substrate and remove the nitride film, a phosphoric acid regenerating unit (the spin treatment unit 30) which mixes liquid etchant used for treatment of one substrate and a suitable quantity of liquid hydrofluoric acid for the amount of the used liquid etchant under a predetermined temperature environment to regenerate the phosphoric acid, and a phosphoric acid recovery unit (the pump 38, phosphoric acid recovery tank 50, and pump 52) which returns the phosphoric acid which was obtained by the phosphoric acid regenerating unit to the liquid etchant to be used at the etching treatment unit.