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公开(公告)号：US12066418B2
公开(公告)日：2024-08-20
申请号：US17609211
申请日：2020-11-12
Applicant: SHOWA DENKO K.K.
Inventor： Atsushi Suzuki
CPC classification number: G01N33/0052 , G01N21/01 , G01N21/255 , G01N21/314 , G01N21/33 , G01N2021/0112
Abstract: A method for measuring the concentration of fluorine gas, which includes irradiating a halogen fluoride-containing gas with ultraviolet light in which the ratio (WX/WF) of the maximum value (WX) of ultraviolet light intensity in the wavelength region of less than 250 nm with respect to the ultraviolet light intensity (WF) at a wavelength of 285 nm is 1/10 or less, and measuring the absorbance at a wavelength of 285 nm to obtain the concentration of fluorine gas contained in the halogen fluoride-containing gas.
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公开(公告)号：US11779877B2
公开(公告)日：2023-10-10
申请号：US17416807
申请日：2019-12-09
Applicant: SHOWA DENKO K.K.
Inventor： Atsushi Suzuki , Kazuma Matsui
CPC classification number: B01D53/1456 , B01D53/1493 , B01D53/30 , B01D53/685 , B01D53/04 , B01D2251/108 , B01D2251/304 , B01D2251/306 , B01D2251/404 , B01D2251/408 , B01D2252/10 , B01D2257/2022 , B01D2257/2027 , B01D2257/2047
Abstract: A method for removing a halogen fluoride in a mixed gas by reacting the mixed gas containing a halogen fluoride including bromine or iodine with a removing agent, wherein the removing agent is a chloride, bromide or iodide of potassium, sodium, magnesium, calcium and barium. Also disclosed is a quantitative analysis method as well as a quantitative analyzer for a gas component contained in a hydrogen fluoride mixed gas, the method characterized by reacting a mixed gas containing a halogen fluoride and another gas component with a removing agent, thereby removing the halogen fluoride in the mixed gas, further removing produced by-products, and quantitatively analyzing a residual gas by a gas chromatograph.
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公开(公告)号：US12154789B2
公开(公告)日：2024-11-26
申请号：US17414041
申请日：2019-12-09
Applicant: SHOWA DENKO K.K.
Inventor： Atsushi Suzuki
IPC: H01L21/3065 , H01L21/311
Abstract: A method for precise plasma etching of micropatterns on a silicon substrate containing silicon or additionally having a silicon oxide film. An etching method for plasma-etching a silicon substrate having silicon or a silicon oxide film using a halogen fluoride having a nitrogen (N2) content of 1 vol % or less as an etching gas. Also disclosed is a method for producing a semiconductor using the etching method.
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公开(公告)号：US11984308B2
公开(公告)日：2024-05-14
申请号：US17608527
申请日：2020-11-12
Applicant: SHOWA DENKO K.K.
Inventor： Atsushi Suzuki
CPC classification number: H01J49/0422 , H01J49/0031 , H01J49/40
Abstract: A method for measuring the concentration of fluorine gas (F2) contained in a halogen fluoride-containing gas using an analysis apparatus having a halogen fluoride-containing gas supply source, a fluorine-containing gas supply source, a tube, a capillary, and a mass spectrometer, the method including, before measuring the concentration of fluorine gas, performing passivation treatment on the tube and the capillary using a passivation gas containing a fluorine-containing gas supplied from the fluorine-containing gas supply source.
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