公开(公告)号：US20200083085A1

公开(公告)日：2020-03-12

申请号：US16559844

申请日：2019-09-04

Applicant: SHOWA DENKO K.K.

Inventor： Jia YU ,  Naoto ISHIBASHI ,  Keisuke FUKADA ,  Yoshikazu UMETA ,  Hironori ATSUMI

IPC: H01L21/687 ,  C23C16/458 ,  H01L21/02

Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.

公开(公告)号：US20180371640A1

公开(公告)日：2018-12-27

申请号：US16063391

申请日：2016-12-12

Applicant: SHOWA DENKO K.K.

Inventor： Jia YU ,  Naoto ISHIBASHI ,  Keisuke FUKADA ,  Tomoya UTASHIRO ,  Hironori ATSUMI

IPC: C30B25/12 ,  C23C16/458 ,  H01L21/687 ,  C30B25/10 ,  C30B25/14

Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.