公开(公告)号：US20200173023A1

公开(公告)日：2020-06-04

申请号：US16699360

申请日：2019-11-29

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu UMETA ,  Hironori ATSUMI

IPC: C23C16/46 ,  H01L21/02 ,  C23C16/32

Abstract: A SiC chemical vapor deposition apparatus is provided, including: a furnace body inside of which a growth space is formed; and a mounting table which is positioned on a lower portion of the growth space and has a mounting surface on which a SiC wafer is mounted, in which the furnace body is separated into a plurality of members in a vertical direction substantially orthogonal to the mounting table, the plurality of members includes a first portion and a second portion, the first portion includes a protruding part that protrudes in an outer peripheral direction, the second portion includes a hook part on which the protruding part is hung, and the first portion and the second portion are connected to each other by hanging the hook part on the protruding part.

公开(公告)号：US20200083085A1

公开(公告)日：2020-03-12

申请号：US16559844

申请日：2019-09-04

Applicant: SHOWA DENKO K.K.

Inventor： Jia YU ,  Naoto ISHIBASHI ,  Keisuke FUKADA ,  Yoshikazu UMETA ,  Hironori ATSUMI

IPC: H01L21/687 ,  C23C16/458 ,  H01L21/02

Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.

公开(公告)号：US20210066113A1

公开(公告)日：2021-03-04

申请号：US16644250

申请日：2018-06-22

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu UMETA ,  Keisuke FUKADA ,  Naoto ISHIBASHI ,  Hironori ATSUMI

IPC: H01L21/687 ,  H01L21/02 ,  C23C16/458 ,  C23C16/32

Abstract: A susceptor (1) of the present invention is a susceptor that is configured to hold a wafer in a CVD apparatus that forms a layer on a wafer through chemical vapor deposition, and includes an external susceptor (2) and an internal susceptor (1). The external susceptor (2) has an opening (2c) that accommodates the internal susceptor (1) in a coupling manner and has a wafer placement surface (2a) on which an outer peripheral portion (Ws) of a wafer is placed. The internal susceptor (1) includes a projection portion (1a) on a surface (1b) facing the wafer (W), and a height (h) of the projection portion (1a) is a height at which the projection portion does not come into contact with the wafer (W) when the wafer (W) is placed on the susceptor.

公开(公告)号：US20180371640A1

公开(公告)日：2018-12-27

申请号：US16063391

申请日：2016-12-12

Applicant: SHOWA DENKO K.K.

Inventor： Jia YU ,  Naoto ISHIBASHI ,  Keisuke FUKADA ,  Tomoya UTASHIRO ,  Hironori ATSUMI

IPC: C30B25/12 ,  C23C16/458 ,  H01L21/687 ,  C30B25/10 ,  C30B25/14

Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.