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Patent Agency Ranking
公开(公告)号：US09758373B2
公开(公告)日：2017-09-12
申请号：US14262437
申请日：2014-04-25
Applicant: STMicroelectronics S.r.l.
Inventor： Stefano Losa , Raffaella Pezzuto , Roberto Campedelli , Matteo Perletti , Luigi Esposito , Mikel Azpeitia Urquia
CPC classification number: H01L21/02178 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C1/00595 , B81C1/00801 , B81C2201/014 , B81C2201/053 , H01L21/0228
Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide, forming a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.
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公开(公告)号：US09824882B2
公开(公告)日：2017-11-21
申请号：US14982380
申请日：2015-12-29
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Stefano Losa , Raffaella Pezzuto , Roberto Campedelli , Matteo Perletti , Luigi Esposito , Mikel Azpeitia Urquia
CPC classification number: H01L21/02178 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C1/00595 , B81C1/00801 , B81C2201/014 , B81C2201/053 , H01L21/0228
Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide to form a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide to form a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.
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3.发明申请公开(公告)号：US20140231937A1
公开(公告)日：2014-08-21
申请号：US14262437
申请日：2014-04-25
Applicant: STMicroelectronics S.r.l.
Inventor： Stefano Losa , Raffaella Pezzuto , Roberto Campedelli , Matteo Perletti , Luigi Esposito , Mikel Azpeitia Urquia
CPC classification number: H01L21/02178 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C1/00595 , B81C1/00801 , B81C2201/014 , B81C2201/053 , H01L21/0228
Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer; forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminium oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.
Abstract translation: 一种用于制造用于保护中间结构层以防止用氢氟酸蚀刻的保护层的方法，所述中间结构层由可被氢氟酸蚀刻或损坏的材料制成，所述方法包括以下步骤：形成第一层 氧化铝，通过原子层沉积在中间结构层上; 在第一氧化铝层上进行热结晶处理，形成第一中间保护层; 通过原子层沉积在第一中间保护层之上形成第二层氧化铝; 并在第二氧化铝层上进行热结晶处理，形成第二中间保护层，从而完成保护层的形成。 形成保护层的方法可以用于例如陀螺仪或加速度计等惯性传感器的制造步骤。
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4.发明授权Capped integrated device with protective cap, composite wafer incorporating integrated devices and process for bonding integrated devices with respective protective caps 有权带保护帽的带盖的集成设备，集成了集成设备的复合晶片和用于将集成设备与相应保护盖结合的过程公开(公告)号：US08669141B2
公开(公告)日：2014-03-11
申请号：US13797154
申请日：2013-03-12
Applicant: STMicroelectronics S.r.l.
Inventor： Alessandro Freguglia , Luigi Esposito
IPC: H01L21/00 , H01L21/3205
CPC classification number: H01L21/52 , B81C1/00269 , B81C2203/019
Abstract: A capped integrated device includes a semiconductor chip, incorporating an integrated device and a protective cap, bonded to the semiconductor chip for protection of the integrated device by means of a bonding layer made of a bonding material. The bonding material forms anchorage elements within recesses, formed in at least one between the semiconductor chip and the protective cap.
Abstract translation: 封装的集成器件包括结合有集成器件和保护帽的半导体芯片，其结合到半导体芯片上，以通过由接合材料制成的接合层来保护集成器件。 接合材料在凹部内形成锚固元件，形成在半导体芯片和保护帽之中的至少一个中。
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5.发明申请CAPPED INTEGRATED DEVICE WITH PROTECTIVE CAP, COMPOSITE WAFER INCORPORATING INTEGRATED DEVICES AND PROCESS FOR BONDING INTEGRATED DEVICES WITH RESPECTIVE PROTECTIVE CAPS 有权带有保护帽的封装集成器件，合并器件的复合波导和用于与集成保护CAPS绑定集成器件的过程公开(公告)号：US20130203235A1
公开(公告)日：2013-08-08
申请号：US13797154
申请日：2013-03-12
Applicant: STMicroelectronics S.r.l.
Inventor： Alessandro Freguglia , Luigi Esposito
IPC: H01L21/52
CPC classification number: H01L21/52 , B81C1/00269 , B81C2203/019
Abstract: A capped integrated device includes a semiconductor chip, incorporating an integrated device and a protective cap, bonded to the semiconductor chip for protection of the integrated device by means of a bonding layer made of a bonding material. The bonding material forms anchorage elements within recesses, formed in at least one between the semiconductor chip and the protective cap.
Abstract translation: 封装的集成器件包括结合有集成器件和保护帽的半导体芯片，其结合到半导体芯片上，以通过由接合材料制成的接合层来保护集成器件。 接合材料在凹部内形成锚固元件，形成在半导体芯片和保护帽之中的至少一个中。
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