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1.发明申请公开(公告)号：US20140313264A1
公开(公告)日：2014-10-23
申请号：US14253276
申请日：2014-04-15
Applicant: STMicroelectronics S.r.l.
Inventor： Mauro Cattaneo , Roberto Campedelli , Igor Varisco
IPC: B41J2/045
CPC classification number: B41J2/045 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2002/1437 , Y10T29/49401
Abstract: A method for manufacturing a fluid ejection device, comprising the steps of: providing a first semiconductor body having a membrane layer and a piezoelectric actuator which extends over the membrane layer; forming a cavity underneath the membrane layer to form a suspended membrane; providing a second semiconductor body; making, in the second semiconductor body, an inlet through hole configured to form a supply channel of the fluid ejection device; providing a third semiconductor body; forming a recess in the third semiconductor body; forming an outlet channel through the third semiconductor body to form an ejection nozzle of the fluid ejection device; coupling the first semiconductor body with the third semiconductor body and the first semiconductor body with the second semiconductor body in such a way that the piezoelectric actuator is completely housed in the first recess, and the second recess forms an internal chamber of the fluid ejection device.
Abstract translation: 一种制造流体喷射装置的方法，包括以下步骤：提供具有膜层的第一半导体主体和在膜层上延伸的压电致动器; 在膜层下方形成空腔以形成悬浮膜; 提供第二半导体本体; 在所述第二半导体本体中形成入口通孔，所述入口通孔被构造成形成所述流体喷射装置的供应通道; 提供第三半导体体; 在所述第三半导体本体中形成凹部; 形成通过所述第三半导体主体的出口通道以形成所述流体喷射装置的喷嘴; 将第一半导体本体与第三半导体本体和第一半导体本体与第二半导体本体耦合，使得压电致动器完全容纳在第一凹部中，并且第二凹部形成流体喷射装置的内部腔室。
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公开(公告)号：US09824882B2
公开(公告)日：2017-11-21
申请号：US14982380
申请日：2015-12-29
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Stefano Losa , Raffaella Pezzuto , Roberto Campedelli , Matteo Perletti , Luigi Esposito , Mikel Azpeitia Urquia
CPC classification number: H01L21/02178 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C1/00595 , B81C1/00801 , B81C2201/014 , B81C2201/053 , H01L21/0228
Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide to form a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide to form a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.
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3.发明授权公开(公告)号：US09388038B2
公开(公告)日：2016-07-12
申请号：US14265116
申请日：2014-04-29
Applicant: STMicroelectronics S.r.l.
Inventor： Roberto Campedelli , Raffaella Pezzuto , Stefano Losa , Marco Mantovani , Mikel Azpeitia Urquia
CPC classification number: B81B7/0006 , B81B3/0086 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2207/07 , B81B2207/097 , B81C1/00476 , H01L29/84
Abstract: A MEMS device formed by a body; a cavity, extending above the body; mobile and fixed structures extending above the cavity and physically connected to the body via anchoring regions; and electrical-connection regions, extending between the body and the anchoring regions and electrically connected to the mobile and fixed structures. The electrical-connection regions are formed by a conductive multilayer including a first semiconductor material layer, a composite layer of a binary compound of the semiconductor material and of a transition metal, and a second semiconductor material layer.
Abstract translation: 由身体形成的MEMS器件; 一个在身体上方延伸的空腔; 移动和固定结构延伸到腔体之上并通过锚定区域物理地连接到身体; 以及电连接区域，其在主体和锚定区域之间延伸并且电连接到移动和固定结构。 电连接区域由包括第一半导体材料层，半导体材料的二元化合物和过渡金属的复合层和第二半导体材料层的导电多层形成。
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4.发明申请公开(公告)号：US20140231938A1
公开(公告)日：2014-08-21
申请号：US14265116
申请日：2014-04-29
Applicant: STMicroelectronics S.r.l.
Inventor： Roberto Campedelli , Raffaella Pezzuto , Stefano Losa , Marco Mantovani , Mikel Azpeitia Urquia
CPC classification number: B81B7/0006 , B81B3/0086 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2207/07 , B81B2207/097 , B81C1/00476 , H01L29/84
Abstract: A MEMS device formed by a body; a cavity, extending above the body; mobile and fixed structures extending above the cavity and physically connected to the body via anchoring regions; and electrical-connection regions, extending between the body and the anchoring regions and electrically connected to the mobile and fixed structures. The electrical-connection regions are formed by a conductive multilayer including a first semiconductor material layer, a composite layer of a binary compound of the semiconductor material and of a transition metal, and a second semiconductor material layer.
Abstract translation: 由身体形成的MEMS器件; 一个在身体上方延伸的空腔; 移动和固定结构延伸到腔体之上并通过锚定区域物理地连接到身体; 以及电连接区域，其在主体和锚定区域之间延伸并且电连接到移动和固定结构。 电连接区域由包括第一半导体材料层，半导体材料的二元化合物和过渡金属的复合层的导电多层和第二半导体材料层形成。
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5.发明申请公开(公告)号：US20140231937A1
公开(公告)日：2014-08-21
申请号：US14262437
申请日：2014-04-25
Applicant: STMicroelectronics S.r.l.
Inventor： Stefano Losa , Raffaella Pezzuto , Roberto Campedelli , Matteo Perletti , Luigi Esposito , Mikel Azpeitia Urquia
CPC classification number: H01L21/02178 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C1/00595 , B81C1/00801 , B81C2201/014 , B81C2201/053 , H01L21/0228
Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer; forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminium oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.
Abstract translation: 一种用于制造用于保护中间结构层以防止用氢氟酸蚀刻的保护层的方法，所述中间结构层由可被氢氟酸蚀刻或损坏的材料制成，所述方法包括以下步骤：形成第一层 氧化铝，通过原子层沉积在中间结构层上; 在第一氧化铝层上进行热结晶处理，形成第一中间保护层; 通过原子层沉积在第一中间保护层之上形成第二层氧化铝; 并在第二氧化铝层上进行热结晶处理，形成第二中间保护层，从而完成保护层的形成。 形成保护层的方法可以用于例如陀螺仪或加速度计等惯性传感器的制造步骤。
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Patent Agency Ranking
公开(公告)号：US11969757B2
公开(公告)日：2024-04-30
申请号：US17191475
申请日：2021-03-03
Applicant: STMicroelectronics S.r.l.
Inventor： Federico Vercesi , Alessandro Danei , Giorgio Allegato , Gabriele Gattere , Roberto Campedelli
CPC classification number: B06B1/0666 , H10N30/01
Abstract: A method for manufacturing a PMUT device including a piezoelectric element located at a membrane element is provided. The method includes receiving a silicon on insulator substrate having a first silicon layer, an oxide layer, and a second silicon layer. Portions of a first surface of the second silicon layer are exposed by removing exposed side portions of the first silicon layer and corresponding portions of the oxide layer, and a central portion including the remaining portions of the first silicon layer and of the oxide layer is defined. Anchor portions for the membrane element are formed at the exposed portions of the first surface of the second silicon layer. The piezoelectric element is formed above the central portion, and the membrane element is defined by selectively removing the second layer and removing the remaining portion of the oxide from under the remaining portion of the first silicon layer.
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7.发明申请PROCESS FOR MANUFACTURING A MICROELECTROMECHANICAL INTERACTION SYSTEM FOR A STORAGE MEDIUM 审中-公开用于制造存储介质的微电子交互系统的方法公开(公告)号：US20160332871A1
公开(公告)日：2016-11-17
申请号：US15220267
申请日：2016-07-26
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giuseppe Barillaro , Alessandro Diligenti , Caterina Riva , Roberto Campedelli , Stefano Losa
IPC: B81C1/00
CPC classification number: B81C1/00539 , B81B2201/038 , B81B2201/07 , B81B2201/12 , B81B2203/0118 , B81B2203/019 , B81C1/00595 , B81C2201/0136 , B81C2203/0714 , H01L27/10
Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.
Abstract translation: 一种用于制造用于存储介质的微机电类型的相互作用系统的方法，具有支撑元件的相互作用系统和由支撑元件承载的相互作用元件，其设想是提供具有基板的半导体材料晶片，其具有 第一类导电性和顶面; 在所述顶表面附近的所述衬底的表面部分中形成具有与所述第一类型导电性相反的第二导电类型的第一相互作用区域; 并且从顶表面开始进行基板的电化学蚀刻，蚀刻相对于第二类型的导电性是选择性的，以便去除基板的表面部分并将第一相互作用区域与基板分离，从而形成 支撑元件。
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8.发明授权公开(公告)号：US08998388B2
公开(公告)日：2015-04-07
申请号：US14253276
申请日：2014-04-15
Applicant: STMicroelectronics S.r.l.
Inventor： Mauro Cattaneo , Roberto Campedelli , Igor Varisco
CPC classification number: B41J2/045 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2002/1437 , Y10T29/49401
Abstract: A method for manufacturing a fluid ejection device, comprising the steps of: providing a first semiconductor body having a membrane layer and a piezoelectric actuator which extends over the membrane layer; forming a cavity underneath the membrane layer to form a suspended membrane; providing a second semiconductor body; making, in the second semiconductor body, an inlet through hole configured to form a supply channel of the fluid ejection device; providing a third semiconductor body; forming a recess in the third semiconductor body; forming an outlet channel through the third semiconductor body to form an ejection nozzle of the fluid ejection device; coupling the first semiconductor body with the third semiconductor body and the first semiconductor body with the second semiconductor body in such a way that the piezoelectric actuator is completely housed in the first recess, and the second recess forms an internal chamber of the fluid ejection device.
Abstract translation: 一种制造流体喷射装置的方法，包括以下步骤：提供具有膜层的第一半导体主体和在膜层上延伸的压电致动器; 在膜层下方形成空腔以形成悬浮膜; 提供第二半导体本体; 在所述第二半导体本体中形成入口通孔，所述入口通孔被构造成形成所述流体喷射装置的供应通道; 提供第三半导体体; 在所述第三半导体主体中形成凹部; 形成通过所述第三半导体主体的出口通道以形成所述流体喷射装置的喷嘴; 将第一半导体本体与第三半导体本体和第一半导体本体与第二半导体本体耦合，使得压电致动器完全容纳在第一凹部中，并且第二凹部形成流体喷射装置的内部腔室。
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9.发明授权公开(公告)号：US10221066B2
公开(公告)日：2019-03-05
申请号：US15220267
申请日：2016-07-26
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giuseppe Barillaro , Alessandro Diligenti , Caterina Riva , Roberto Campedelli , Stefano Losa
Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.
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公开(公告)号：US09758373B2
公开(公告)日：2017-09-12
申请号：US14262437
申请日：2014-04-25
Applicant: STMicroelectronics S.r.l.
Inventor： Stefano Losa , Raffaella Pezzuto , Roberto Campedelli , Matteo Perletti , Luigi Esposito , Mikel Azpeitia Urquia
CPC classification number: H01L21/02178 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C1/00595 , B81C1/00801 , B81C2201/014 , B81C2201/053 , H01L21/0228
Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide, forming a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.
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