公开(公告)号：US20240113179A1

公开(公告)日：2024-04-04

申请号：US18471219

申请日：2023-09-20

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Laura Letizia SCALIA ,  Cateno Marco CAMALLERI ,  Leonardo FRAGAPANE

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/41741 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/66068 ,  H01L29/7802

Abstract: Electronic device, comprising: a semiconductor body having a surface; a body region in the semiconductor body, extending along a main direction parallel to the surface of the semiconductor body; and a source region in the body region, extending along the main direction. The electronic device has, at the body and source regions, a first and a second electrical contact region alternating with each other along the main direction, wherein the first electrical contact region exposes the body region, and the second electrical contact region exposes the source region. The electronic device further comprises an electrical connection layer extending with electrical continuity longitudinally to the body and source regions, in electrical connection with the first and the second electrical contact regions.

公开(公告)号：US20240071912A1

公开(公告)日：2024-02-29

申请号：US18450789

申请日：2023-08-16

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Laura Letizia SCALIA ,  Cateno Marco CAMALLERI ,  Edoardo ZANETTI ,  Alfio RUSSO

IPC: H01L23/525 ,  H01L23/29 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L23/5256 ,  H01L23/293 ,  H01L29/1608 ,  H01L29/66666 ,  H01L29/7827

Abstract: SiC-based MOSFET electronic device comprising: a solid body; a gate terminal, extending into the solid body; a conductive path, extending at a first side of the solid body, configured to be electrically couplable to a generator of a biasing voltage; a protection element of a solid-state material, coupled to the gate terminal and to the conductive path, the protection element forming an electronic connection between the gate terminal and the conductive path, and being configured to go from the solid state to a melted or gaseous state, interrupting the electrical connection, in response to a leakage current through the protection element greater than a critical threshold; a buried cavity in the solid body accommodating, at least in part, the protection element.