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公开(公告)号:US20230061430A1
公开(公告)日:2023-03-02
申请号:US17896692
申请日:2022-08-26
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Paolo FERRARI , Lorenzo CORSO , Flavio Francesco VILLA , Silvia NICOLI , Luca LAMAGNA
Abstract: Method for manufacturing a micro-electro-mechanical system, MEMS, integrating a first MEMS device and a second MEMS device. The first MEMS device is a capacitive pressure sensor and the second MEMS device is an inertial sensor. The steps of manufacturing the first and second MEMS devices are, at least partly, shared with each other, resulting in a high degree of integration on a single die, and allowing to implement a manufacturing process with high yield and controlled costs.
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公开(公告)号:US20230064114A1
公开(公告)日:2023-03-02
申请号:US17821717
申请日:2022-08-23
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Paolo FERRARI , Flavio Francesco VILLA , Roberto CAMPEDELLI , Luca LAMAGNA , Enri DUQI , Mikel AZPEITIA URQUIA , Silvia NICOLI , Maria Carolina TURI
Abstract: The present disclosure is directed to a method for manufacturing a micro-electro-mechanical device. The method includes the steps of forming, on a substrate, a first protection layer of crystallized aluminum oxide, impermeable to HF; forming, on the first protection layer, a sacrificial layer of silicon oxide removable with HF; forming, on the sacrificial layer, a second protection layer of crystallized aluminum oxide; exposing a sacrificial portion of the sacrificial layer; forming, on the sacrificial portion, a first membrane layer of a porous material, permeable to HF; forming a cavity by removing the sacrificial portion through the first membrane layer; and sealing pores of the first membrane layer by forming a second membrane layer on the first membrane layer.
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公开(公告)号:US20170339494A1
公开(公告)日:2017-11-23
申请号:US15365590
申请日:2016-11-30
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Matteo PERLETTI , Igor VARISCO , Luca LAMAGNA , Silvia ADORNO , Gabriele GATTERE , Carlo VALZASINA , Sebastiano CONTI
CPC classification number: H04R19/005 , B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81B2203/0136 , B81B2203/0315 , B81B2203/04 , B81B2203/053 , B81C1/00158 , B81C2201/0109 , B81C2201/0111 , B81C2201/0133 , G01H11/06 , H04R31/00 , H04R2201/003 , H04R2201/023
Abstract: A MEMS acoustic transducer provided with: a substrate of semiconductor material, having a back surface and a front surface opposite with respect to a vertical direction; a first cavity formed within the substrate, which extends from the back surface to the front surface; a membrane which is arranged at the upper surface, suspended above the first cavity and anchored along a perimeter thereof to the substrate; and a combfingered electrode arrangement including a number of mobile electrodes coupled to the membrane and a number of fixed electrodes coupled to the substrate and facing respective mobile electrodes for forming a sensing capacitor, wherein a deformation of the membrane as a result of incident acoustic pressure waves causes a capacitive variation of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane and extends parallel thereto.
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