公开(公告)号：US20190090067A1

公开(公告)日：2019-03-21

申请号：US16128288

申请日：2018-09-11

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Matteo PERLETTI ,  Federico VERCESI ,  Silvia ADORNO ,  Giorgio ALLEGATO

IPC: H04R19/04 ,  B81B7/00 ,  B81C1/00 ,  H04R19/00 ,  H04R1/28

CPC classification number: H04R19/04 ,  B81B7/0029 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2207/012 ,  B81C1/00309 ,  B81C1/00626 ,  B81C2201/014 ,  B81C2201/0198 ,  H04R1/086 ,  H04R1/2807 ,  H04R19/005 ,  H04R31/00 ,  H04R2201/003

Abstract: A method for manufacturing a filtering module comprising the steps of: forming a multilayer body comprising a filter layer of semiconductor material and having a thickness of less than 10 μm, a first structural layer coupled to a first side of the filter layer, and a second structural layer coupled to a second side, opposite to the first side, of the filter layer; forming a recess in the first structural layer, which extends throughout its thickness; removing selective portions, exposed through the recess, of the filter layer to form a plurality of openings, which extend throughout the thickness of the filter layer; and completely removing the second structural layer to connect fluidically the first and second sides of the filter layer, thus forming a filtering membrane designed to inhibit passage of contaminating particles.

公开(公告)号：US20200092659A1

公开(公告)日：2020-03-19

申请号：US16693003

申请日：2019-11-22

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Matteo PERLETTI ,  Federico VERCESI ,  Silvia ADORNO ,  Giorgio ALLEGATO

IPC: H04R19/04 ,  B81C1/00 ,  H04R31/00 ,  H04R1/08 ,  B81B7/00 ,  H04R19/00 ,  H04R1/28

Abstract: A method for manufacturing a filtering module comprising the steps of: forming a multilayer body comprising a filter layer of semiconductor material and having a thickness of less than 10 μm, a first structural layer coupled to a first side of the filter layer, and a second structural layer coupled to a second side, opposite to the first side, of the filter layer; forming a recess in the first structural layer, which extends throughout its thickness; removing selective portions, exposed through the recess, of the filter layer to form a plurality of openings, which extend throughout the thickness of the filter layer; and completely removing the second structural layer to connect fluidically the first and second sides of the filter layer, thus forming a filtering membrane designed to inhibit passage of contaminating particles.

公开(公告)号：US20160130140A1

公开(公告)日：2016-05-12

申请号：US14982380

申请日：2015-12-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Stefano LOSA ,  Raffaella PEZZUTO ,  Roberto CAMPEDELLI ,  Matteo PERLETTI ,  Luigi ESPOSITO ,  Mikel Azpeitia URQUIA

IPC: B81C1/00

CPC classification number: H01L21/02178 ,  B81B7/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00595 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/053 ,  H01L21/0228

Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer; forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminium oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

Abstract translation: 一种用于制造用于保护中间结构层以防止用氢氟酸蚀刻的保护层的方法，所述中间结构层由可被氢氟酸蚀刻或损坏的材料制成，所述方法包括以下步骤：形成第一层 氧化铝，通过原子层沉积在中间结构层上; 在第一氧化铝层上进行热结晶处理，形成第一中间保护层; 通过原子层沉积在第一中间保护层之上形成第二层氧化铝; 并在第二氧化铝层上进行热结晶处理，形成第二中间保护层，从而完成保护层的形成。 形成保护层的方法可以用于例如陀螺仪或加速度计等惯性传感器的制造步骤。

公开(公告)号：US20190239000A1

公开(公告)日：2019-08-01

申请号：US16256816

申请日：2019-01-24

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giorgio ALLEGATO ,  Federico VERCESI ,  Laura Maria CASTOLDI ,  Laura OGGIONI ,  Matteo PERLETTI

IPC: H04R19/04 ,  B81C1/00

CPC classification number: H04R19/04 ,  B81C1/00309 ,  B81C2201/0133 ,  H04R1/021 ,  H04R1/086 ,  H04R19/005 ,  H04R31/00 ,  H04R2201/003

Abstract: A method for manufacturing a semiconductor die, comprising the steps of: providing a MEMS device having a structural body, provided with a cavity, and a membrane structure suspended over the cavity; coupling the structural body to a filtering module via direct bonding or fusion bonding so that a first portion of the filtering module extends over the cavity and a second portion of the filtering module extends seamlessly as a prolongation of the structural body; and etching selective portions of the filtering module in an area corresponding to the first portion, to form filtering openings fluidically coupled to the cavity. The semiconductor die is, for example, a microphone.

公开(公告)号：US20170339494A1

公开(公告)日：2017-11-23

申请号：US15365590

申请日：2016-11-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Matteo PERLETTI ,  Igor VARISCO ,  Luca LAMAGNA ,  Silvia ADORNO ,  Gabriele GATTERE ,  Carlo VALZASINA ,  Sebastiano CONTI

IPC: H04R19/00 ,  B81B3/00 ,  G01H11/06 ,  B81C1/00

CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/053 ,  B81C1/00158 ,  B81C2201/0109 ,  B81C2201/0111 ,  B81C2201/0133 ,  G01H11/06 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/023

Abstract: A MEMS acoustic transducer provided with: a substrate of semiconductor material, having a back surface and a front surface opposite with respect to a vertical direction; a first cavity formed within the substrate, which extends from the back surface to the front surface; a membrane which is arranged at the upper surface, suspended above the first cavity and anchored along a perimeter thereof to the substrate; and a combfingered electrode arrangement including a number of mobile electrodes coupled to the membrane and a number of fixed electrodes coupled to the substrate and facing respective mobile electrodes for forming a sensing capacitor, wherein a deformation of the membrane as a result of incident acoustic pressure waves causes a capacitive variation of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane and extends parallel thereto.