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    Three-axis accelerometers and fabrication methods
    2.
    发明授权
    Three-axis accelerometers and fabrication methods 有权
    三轴加速度计和制造方法

    公开(公告)号：US08372677B2

    公开(公告)日：2013-02-12

    申请号：US13466595

    申请日：2012-05-08

    Applicant: Mehran Mehregany

    Inventor： Mehran Mehregany

    IPC: H01L21/00 ,  G01P15/13

    CPC classification number: G01P15/18 ,  B81B2201/0235 ,  B81C1/00182 ,  B81C2201/0111 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/131 ,  G01P2015/084 ,  Y10T29/49156

    Abstract: MEMS accelerometers have a substrate, and a proof mass portion thereof which is separated from the substrate surrounding it by a gap. An electrically-conductive anchor is coupled to the proof mass, and a plurality of electrically-conductive suspension anus that are separated from the proof mass extend from the anchor and are coupled to the substrate surrounding the proof mass. A plurality of sense and actuation electrodes are separated from the proof mass by gaps and are coupled to processing electronics. The fabrication methods use deep reactive ion etch bulk micromachining and surface micromachining to form the proof mass, suspension arms and electrodes. The anchor, suspension arms and electrodes are made in the same process steps from the same electrically conductive material, which is different from the substrate material.

    Abstract translation: MEMS加速度计具有基板和其与其周围的基板间隔开的检验质量部分。 导电锚固体耦合到检测质量块，并且与防护物质分离的多个导电悬浮肛门从锚固体延伸并且耦合到围绕证明物质的基底。 多个感测和致动电极通过间隙与证明块分离，并且耦合到处理电子器件。 制造方法使用深反应离子蚀刻体微加工和表面微加工形成证明质量块，悬臂和电极。 锚固器，悬架臂和电极由与基板材料不同的相同导电材料以相同的工艺步骤制成。

    Method of creating MEMS device cavities by a non-etching process
    3.
    发明授权
    Method of creating MEMS device cavities by a non-etching process 有权
    通过非蚀刻工艺制造MEMS器件腔的方法

    公开(公告)号：US07795061B2

    公开(公告)日：2010-09-14

    申请号：US11321134

    申请日：2005-12-29

    Applicant: Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

    Inventor： Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

    IPC: H01L21/00

    CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81C2201/0108 ,  B81C2201/0111 ,  G02B26/001

    Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

    Abstract translation: 可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。 一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电 导电层。 另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体 在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电 导电层和第二导电层。

    Three-axis accelerometers and fabrication methods
    7.
    发明授权
    Three-axis accelerometers and fabrication methods 有权
    三轴加速度计和制造方法

    公开(公告)号：US07892876B2

    公开(公告)日：2011-02-22

    申请号：US12503382

    申请日：2009-07-15

    Applicant: Mehran Mehregany

    Inventor： Mehran Mehregany

    IPC: H01L21/00 ,  H01L21/56

    CPC classification number: G01P15/18 ,  B81B2201/0235 ,  B81C1/00182 ,  B81C2201/0111 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/131 ,  G01P2015/084 ,  Y10T29/49156

    Abstract: Disclosed are MEMS accelerometers and methods for fabricating same. An exemplary accelerometer comprises a substrate, and a proof mass that is a portion of the substrate and which is separated from the substrate surrounding it by a gap. An electrically-conductive anchor is coupled to the proof mass, and a plurality of electrically-conductive suspension anus that are separated from the proof mass extend from the anchor and are coupled to the substrate surrounding the proof mass. A plurality of sense and actuation electrodes are separated from the proof mass by gaps and are coupled to processing electronics. Capacitive sensing is used to derive electrical signals caused by forces exerted on the proof mass, and the electrical signals are processed by the processing electronics to produce x-, y- and z-direction acceleration data. Electrostatic actuation is used to induce movements of the mass for force balance operation, or self-test and self-calibration. The fabrication methods use deep reactive ion etch bulk micromachining and surface micromachining to form the proof mass, suspension arms and electrodes. The anchor, suspension arms and electrodes are made in the same process steps from the same electrically conductive material, which is different from the substrate material.

    Abstract translation: 公开了MEMS加速度计及其制造方法。 示例性的加速度计包括基板和作为基板的一部分的检测质量块，并且其与通过间隙围绕其的基板分离。 导电锚固体耦合到检测质量块，并且与防护物质分离的多个导电悬浮肛门从锚固体延伸并且耦合到围绕证明物质的基底。 多个感测和致动电极通过间隙与证明块分离，并且耦合到处理电子器件。 电容感测用于导出由施加在检验质量上的力引起的电信号，并且电信号由处理电子器件处理以产生x，y和z方向的加速度数据。 静电驱动用于引起质量的运动，用于力平衡运行，或自检和自校准。 制造方法使用深反应离子蚀刻体微加工和表面微加工形成证明质量块，悬臂和电极。 锚固器，悬架臂和电极由与基板材料不同的相同导电材料以相同的工艺步骤制成。

    Method for manufacturing MEMS torsional electrostatic actuator
    9.
    发明授权
    Method for manufacturing MEMS torsional electrostatic actuator 有权

    公开(公告)号：US09834437B2

    公开(公告)日：2017-12-05

    申请号：US15327230

    申请日：2015-07-31

    Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

    Inventor： Errong Jing

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00182 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00603 ,  B81C2201/0109 ,  B81C2201/0111

    Abstract: A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate, wherein the substrate comprises a first silicon layer, a buried oxide layer and a second silicon layer that are laminated sequentially; patterning the first silicon layer and exposing the buried oxide layer to form a rectangular upper electrode plate separated from a peripheral region, wherein the upper electrode plate and the peripheral region are connected by only using a cantilever beam, and forming, on the peripheral region, a recessed portion exposing the buried oxide layer; patterning the second silicon layer and exposing the buried oxide layer to form a back cavity, wherein the back cavity is located in a region of the second silicon layer corresponding to the upper electrode plate, covers 40% to 60% of the area of the region corresponding to the upper electrode plate, and is close to one end of the cantilever beam; exposing the second silicon layer, and suspending the upper electrode plate and the cantilever beam; and respectively forming an upper contact electrode and a lower contact electrode on the second silicon layer.

    METHOD FOR MANUFACTURING MEMS TORSIONAL ELECTROSTATIC ACTUATOR
    10.
    发明申请
    METHOD FOR MANUFACTURING MEMS TORSIONAL ELECTROSTATIC ACTUATOR 有权

    公开(公告)号：US20170174508A1

    公开(公告)日：2017-06-22

    申请号：US15327230

    申请日：2015-07-31

    Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

    Inventor： Errong JING

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00182 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00603 ,  B81C2201/0109 ,  B81C2201/0111

    Abstract: A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate, wherein the substrate comprises a first silicon layer, a buried oxide layer and a second silicon layer that are laminated sequentially; patterning the first silicon layer and exposing the buried oxide layer to form a rectangular upper electrode plate separated from a peripheral region, wherein the upper electrode plate and the peripheral region are connected by only using a cantilever beam, and forming, on the peripheral region, a recessed portion exposing the buried oxide layer; patterning the second silicon layer and exposing the buried oxide layer to form a back cavity, wherein the back cavity is located in a region of the second silicon layer corresponding to the upper electrode plate, covers 40% to 60% of the area of the region corresponding to the upper electrode plate, and is close to one end of the cantilever beam; exposing the second silicon layer, and suspending the upper electrode plate and the cantilever beam; and respectively forming an upper contact electrode and a lower contact electrode on the second silicon layer.

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