公开(公告)号：US20170294379A1

公开(公告)日：2017-10-12

申请号：US15093416

申请日：2016-04-07

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Didier Dutartre ,  Jean-Pierre Carrere ,  Jean-Luc Huguenin ,  Clement Pribat ,  Sarah Kuster

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/06 ,  H01L27/12

CPC classification number: H01L21/76877 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/7624 ,  H01L21/823475 ,  H01L21/84 ,  H01L27/1207 ,  H01L29/0649

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US10262898B2

公开(公告)日：2019-04-16

申请号：US15093416

申请日：2016-04-07

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Didier Dutartre ,  Jean-Pierre Carrere ,  Jean-Luc Huguenin ,  Clement Pribat ,  Sarah Kuster

IPC: H01L21/768 ,  H01L21/82 ,  H01L27/12 ,  H01L29/70 ,  H01L27/082 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/762 ,  H01L21/02

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US10978340B2

公开(公告)日：2021-04-13

申请号：US16384147

申请日：2019-04-15

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Didier Dutartre ,  Jean-Pierre Carrere ,  Jean-Luc Huguenin ,  Clement Pribat ,  Sarah Kuster

IPC: H01L27/12 ,  H01L27/146 ,  H01L27/06 ,  H01L27/07 ,  H01L29/06 ,  H01L29/10 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/762 ,  H01L21/74 ,  H01L21/02

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US11581249B2

公开(公告)日：2023-02-14

申请号：US17015634

申请日：2020-09-09

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Jean-Pierre Carrere ,  Francois Guyader

IPC: H01L23/495 ,  H01L23/498 ,  H01L21/48 ,  H01L31/02

Abstract: A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.

公开(公告)号：US11901278B2

公开(公告)日：2024-02-13

申请号：US18095629

申请日：2023-01-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Jean-Pierre Carrere ,  Francois Guyader

IPC: H01L23/495 ,  H01L23/498 ,  H01L21/48 ,  H01L31/02

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L23/49894 ,  H01L31/02016

Abstract: A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.

公开(公告)号：US11562927B2

公开(公告)日：2023-01-24

申请号：US17228164

申请日：2021-04-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Didier Dutartre ,  Jean-Pierre Carrere ,  Jean-Luc Huguenin ,  Clement Pribat ,  Sarah Kuster

IPC: H01L21/768 ,  H01L21/82 ,  H01L21/84 ,  H01L21/762 ,  H01L21/74 ,  H01L21/02 ,  H01L29/06 ,  H01L27/12 ,  H01L21/8234

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US09224775B2

公开(公告)日：2015-12-29

申请号：US14446804

申请日：2014-07-30

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Jean-Pierre Carrere ,  Patrick Gros D'Aillon ,  Stephane Allegret-Maret ,  Jean-Pierre Oddou

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

Abstract: An integrated circuit includes a back side illuminated image sensor formed by a substrate supporting at least one pixel, an interconnect part situated above a front side of the substrate and an anti-reflective layer situated above a back side of the substrate. The anti-reflective layer may be formed of a silicon nitride layer. An additional layer is situated above the anti-reflective layer. The additional layer is formed of one of amorphous silicon nitride or hydrogenated amorphous silicon nitride, in which the ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter is greater than 0.7.

Abstract translation: 集成电路包括由支撑至少一个像素的衬底形成的背面照明图像传感器，位于衬底前侧之上的互连部分和位于衬底背面上方的抗反射层。 抗反射层可以由氮化硅层形成。 附加层位于抗反射层上方。 附加层由非晶氮化硅或氢化非晶氮化硅之一形成，其中每立方厘米的硅原子数与每立方厘米的氮原子数之比大于0.7。

公开(公告)号：US20150035106A1

公开(公告)日：2015-02-05

申请号：US14446804

申请日：2014-07-30

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Jean-Pierre Carrere ,  Patrick Gros D'Aillon ,  Stephane Allegret-Maret ,  Jean-Pierre Oddou

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

Abstract: An integrated circuit includes a back side illuminated image sensor formed by a substrate supporting at least one pixel, an interconnect part situated above a front side of the substrate and an anti-reflective layer situated above a back side of the substrate. The anti-reflective layer may be formed of a silicon nitride layer. An additional layer is situated above the anti-reflective layer. The additional layer is formed of one of amorphous silicon nitride or hydrogenated amorphous silicon nitride, in which the ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter is greater than 0.7.

Abstract translation: 集成电路包括由支撑至少一个像素的衬底形成的背面照明图像传感器，位于衬底前侧之上的互连部分和位于衬底背面上方的抗反射层。 抗反射层可以由氮化硅层形成。 附加层位于抗反射层上方。 附加层由非晶氮化硅或氢化非晶氮化硅之一形成，其中每立方厘米的硅原子数与每立方厘米的氮原子数之比大于0.7。