公开(公告)号：US11239376B2

公开(公告)日：2022-02-01

申请号：US16584774

申请日：2019-09-26

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Frederic Lanois

IPC: H01L29/10 ,  H01L29/861 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: The present disclosure relates to a structure comprising, in a trench of a substrate, a first conductive region separated from the substrate by a first distance shorter than approximately 10 nm; and a second conductive region extending deeper than the first region.

公开(公告)号：US10784787B2

公开(公告)日：2020-09-22

申请号：US14525460

申请日：2014-10-28

Applicant: STMicroelectronics (Tours) SAS

Inventor： Bertrand Rivet ,  Greca Jean Charles ,  Frederic Lanois

IPC: H02M3/335 ,  H03K17/16 ,  H03K17/687 ,  H03K17/74 ,  H02M1/08 ,  H03K3/012

Abstract: A circuit includes a first field-effect transistor and a second field-effect transistor. The first field-effect transistor includes a first diode with drain, source, gate and first additional electrodes. The second field-effect transistor includes a second diode with drain, source, gate and second additional electrodes. A first switch selectively connects the gate and drain electrodes of the first field-effect transistor. A second switch selectively connects the gate and drain electrodes of the second field-effect transistor. A control circuit controls the first and second switches. The first additional electrode is coupled to the gate electrode of the second field-effect transistor, and the second additional electrode is coupled to the gate electrode of the first field-effect transistor.

公开(公告)号：US20150117063A1

公开(公告)日：2015-04-30

申请号：US14525460

申请日：2014-10-28

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Bertrand Rivet ,  Greca Jean Charles ,  Frederic Lanois

IPC: H02M3/335 ,  H03K3/012 ,  H02M1/08

Abstract: A circuit includes a first field-effect transistor and a second field-effect transistor. The first field-effect transistor includes a first diode with drain, source, gate and first additional electrodes. The second field-effect transistor includes a second diode with drain, source, gate and second additional electrodes. A first switch selectively connects the gate and drain electrodes of the first field-effect transistor. A second switch selectively connects the gate and drain electrodes of the second field-effect transistor. A control circuit controls the first and second switches. The first additional electrode is coupled to the gate electrode of the second field-effect transistor, and the second additional electrode is coupled to the gate electrode of the first field-effect transistor.

Abstract translation: 电路包括第一场效应晶体管和第二场效应晶体管。 第一场效应晶体管包括具有漏极，源极，栅极和第一附加电极的第一二极管。 第二场效应晶体管包括具有漏极，源极，栅极和第二附加电极的第二二极管。 第一开关选择性地连接第一场效应晶体管的栅电极和漏电极。 第二开关选择性地连接第二场效应晶体管的栅电极和漏电极。 控制电路控制第一和第二开关。 第一附加电极耦合到第二场效应晶体管的栅电极，第二附加电极耦合到第一场效应晶体管的栅电极。