公开(公告)号：US09685778B2

公开(公告)日：2017-06-20

申请号：US14725342

申请日：2015-05-29

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mathieu Rouviere ,  Laurent Moindron ,  Christian Ballon

IPC: H02H3/20 ,  H01L29/732 ,  H01L27/07 ,  H01L29/87 ,  H01L27/02 ,  H01L27/06 ,  H01L49/02 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872

CPC classification number: H02H3/20 ,  H01L27/0248 ,  H01L27/0262 ,  H01L27/0629 ,  H01L27/0761 ,  H01L28/20 ,  H01L29/732 ,  H01L29/7322 ,  H01L29/7395 ,  H01L29/7827 ,  H01L29/87 ,  H01L29/872

Abstract: An integrated circuit includes a vertical Shockley diode and a first vertical transistor. The diode is formed by, from top to bottom of a semiconductor substrate, a first region of a first conductivity type, a substrate of a second conductivity type, and a second region of the first conductivity type having a third region of the second conductivity type formed therein. The vertical transistor is formed by, also from top to bottom, a portion of the second region and a fourth region of the second conductivity type. The third and fourth regions are electrically connected to each other.

公开(公告)号：US20150380925A1

公开(公告)日：2015-12-31

申请号：US14725342

申请日：2015-05-29

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mathieu Rouviere ,  Laurent Moindron ,  Christian Ballon

IPC: H02H3/20 ,  H01L27/06 ,  H01L27/02 ,  H01L29/739 ,  H01L49/02 ,  H01L29/872 ,  H01L29/78

CPC classification number: H02H3/20 ,  H01L27/0248 ,  H01L27/0262 ,  H01L27/0629 ,  H01L27/0761 ,  H01L28/20 ,  H01L29/732 ,  H01L29/7322 ,  H01L29/7395 ,  H01L29/7827 ,  H01L29/87 ,  H01L29/872

Abstract: An integrated circuit includes a vertical Shockley diode and a first vertical transistor. The diode is formed by, from top to bottom of a semiconductor substrate, a first region of a first conductivity type, a substrate of a second conductivity type, and a second region of the first conductivity type having a third region of the second conductivity type formed therein. The vertical transistor is formed by, also from top to bottom, a portion of the second region and a fourth region of the second conductivity type. The third and fourth regions are electrically connected to each other.

Abstract translation: 集成电路包括垂直Shockley二极管和第一垂直晶体管。 二极管由半导体衬底的顶部到底部形成第一导电类型的第一区域，第二导电类型的衬底和具有第二导电类型的第三区域的第一导电类型的第二区域 在其中形成。 垂直晶体管也是从顶部到底部形成第二区域的一部分和第二导电类型的第四区域。 第三和第四区域彼此电连接。

公开(公告)号：US09293939B2

公开(公告)日：2016-03-22

申请号：US14602015

申请日：2015-01-21

Applicant: STMicroelectronics (Tours) SAS

Inventor： Laurent Moindron ,  Sylvain Charley ,  Jérôme Heurtier

IPC: G11C5/14 ,  H02J7/00 ,  H02J7/34

CPC classification number: H02J7/0072 ,  G01R27/2605 ,  H01Q5/335 ,  H02J7/0052 ,  H02J7/345 ,  H03J3/04

Abstract: A circuit for controlling a capacitor having a capacitance settable by biasing, including at least one terminal for receiving a digital set point value depending on the value desired for the capacitance, a circuit for determining a drift of the capacitance with respect to a nominal value, and a circuit of application of a correction to said digital set point value, depending on the determined drift.

Abstract translation: 一种用于控制电容器的电路，所述电容器具有通过偏置可设置的电容，所述电容器包括至少一个端子，用于接收取决于所述电容所需的值的数字设定值;电路，用于确定电容相对于标称值的漂移， 以及根据所确定的漂移对所述数字设定点值进行校正的电路。