公开(公告)号：US20020094665A1

公开(公告)日：2002-07-18

申请号：US10068108

申请日：2002-02-05

Applicant: STMicroelectronics S.r.I

Inventor： Flavio Villa ,  Gabriele Barlocchi ,  Pietro Montanini

IPC: H01L021/20

CPC classification number: H01L21/3065 ,  H01L21/76248 ,  H01L21/76294

Abstract: Method for manufacturing an SOI wafer. On a monocrystalline silicon wafer, forming protective regions having the shape of an overturned U, made of an oxidation resistant material, the protective regions covering first wafer portions. Forming deep trenches in the wafer which extend between, and laterally delimit the first wafer portions, completely oxidizing the first wafer portions except their upper areas which are covered by the protective regions, to form at least one continuous region of covered oxide overlaid by the non-oxidized upper portions. Removing the protective regions, and epitaxially growing a crystalline semiconductor material layer from the non-oxidized upper portions.

Abstract translation: SOI晶片的制造方法。 在单晶硅晶片上，形成由抗氧化材料制成的具有翻转U形状的保护区域，保护区域覆盖第一晶片部分。 在晶片中形成深沟槽，其在第一晶片部分之间延伸并横向限定第一晶片部分，除了被保护区域覆盖的上部区域之外，完全氧化第一晶片部分，以形成至少一个覆盖氧化物的连续区域， 氧化上部。 去除保护区域，并从非氧化的上部部分外延生长结晶半导体材料层。

公开(公告)号：US20040235149A1

公开(公告)日：2004-11-25

申请号：US10874902

申请日：2004-06-23

Applicant: STMicroelectronics S.r.I.

Inventor： Gabriele Barlocchi ,  Flavio Villa

IPC: C12M001/34

CPC classification number: B01L7/52 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0825 ,  B01L2300/1827 ,  B01L2300/1883

Abstract: Integrated microreactor, formed in a monolithic body and including a semiconductor material region and an insulating layer; a buried channel extending in the semiconductor material region; a first and a second access trench extending in the semiconductor material region and in the insulating layer, and in communication with the buried channel; a first and a second reservoir formed on top of the insulating layer and in communication with the first and the second access trench; a suspended diaphragm formed by the insulating layer, laterally to the buried channel; and a detection electrode, supported by the suspended diaphragm, above the insulating layer, and inside the second reservoir.

Abstract translation: 集成的微反应器，形成在一体的整体中并且包括半导体材料区域和绝缘层; 在半导体材料区域中延伸的掩埋沟道; 在所述半导体材料区域和所述绝缘层中延伸并与所述掩埋沟道连通的第一和第二访问沟槽; 第一和第二储存器，其形成在所述绝缘层的顶部上并且与所述第一和第二接入沟槽连通; 由绝缘层形成的悬浮膜，横向于埋设通道; 以及由悬挂隔膜支撑的检测电极，在绝缘层上方和第二储存器内部。

公开(公告)号：US20030168711A1

公开(公告)日：2003-09-11

申请号：US10327702

申请日：2002-12-20

Applicant: STMicroelectronics S.r.I.

Inventor： Flavio Villa ,  Gabriele Barlocchi ,  Pietro Corona

IPC: H01L029/00

CPC classification number: H01L21/76283 ,  H01L21/3003 ,  H01L21/3247 ,  H01L21/76289 ,  H01L21/764 ,  H01L29/0649 ,  Y10S438/967

Abstract: A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.

Abstract translation: 一种制造SOI晶片的方法，包括以下步骤：在半导体材料的晶片中形成限定半导体材料结构的空腔; 通过热过程稀释结构; 并完全氧化结构。