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    MEMORY DEVICE
    1.
    发明申请
    MEMORY DEVICE 有权

    公开(公告)号：US20220302379A1

    公开(公告)日：2022-09-22

    申请号：US17833415

    申请日：2022-06-06

    Applicant: STMicroelectronics S.r.l. ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES

    Inventor： Paolo Giuseppe CAPPELLETTI ,  Gabriele NAVARRO

    IPC: H01L45/00 ,  H01L27/24

    Abstract: A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.

    MEMORY CELL
    3.
    发明申请
    MEMORY CELL 审中-公开

    公开(公告)号：US20200381618A1

    公开(公告)日：2020-12-03

    申请号：US16883190

    申请日：2020-05-26

    Applicant: STMicroelectronics S.r.l.

    Inventor： Paolo Giuseppe CAPPELLETTI

    IPC: H01L45/00 ,  G11C13/00

    Abstract: A phase-change memory cell is formed by a heater, a crystalline layer disposed above the heater, and an insulating region surrounding sidewalls of the crystalline layer. The phase-change memory cell supports programming with a least three distinct data levels based on a selective amorphization of the crystalline layer.

    SWITCHING CELL
    4.
    发明申请
    SWITCHING CELL 有权

    公开(公告)号：US20220238603A1

    公开(公告)日：2022-07-28

    申请号：US17581557

    申请日：2022-01-21

    Applicant: STMicroelectronics S.r.l.

    Inventor： Paolo Giuseppe CAPPELLETTI ,  Andrea REDAELLI

    IPC: H01L27/24 ,  H01L27/22

    Abstract: An electronic cell includes an integrated stack of structures including, successively: a first electrode; an ovonic threshold switch layer below the first electrode; and a fixed resistor below the ovonic threshold switch layer. A second electrode may be included between fixed resistor and the ovonic threshold switch layer. A memory layer, for example a phase change material layer, a resistive random-access memory layer or a magneto-resistive random-access memory layer, may be included between the first electrode and the ovonic threshold switch layer.

    PHASE CHANGE MEMORY
    6.
    发明申请
    PHASE CHANGE MEMORY 有权

    公开(公告)号：US20230032898A1

    公开(公告)日：2023-02-02

    申请号：US17874595

    申请日：2022-07-27

    Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics (Crolles 2) SAS

    Inventor： Paolo Giuseppe CAPPELLETTI ,  Fausto PIAZZA ,  Andrea REDAELLI

    IPC: H01L27/24 ,  H01L45/00

    Abstract: A memory cell includes a substrate with a semiconductor region and an insulating region. A first insulating layer extends over the substrate. A phase change material layer rests on the first insulating layer. The memory cell further includes an interconnection network with a conductive track. A first end of a first conductive via extending through the first insulating layer is in contact with the phase change material layer and a second end of the first conductive via is in contact with the semiconductor region. A first end of a second conductive via extending through the first insulating layer is in contact with both the phase change material layer and the conductive track, and a second end of the second conductive via is in contact only with the insulating region.

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