Method of manufacturing semiconductor devices and corresponding semiconductor device

    公开(公告)号:US11626379B2

    公开(公告)日:2023-04-11

    申请号:US17199340

    申请日:2021-03-11

    Abstract: A method comprises molding laser direct structuring material onto at least one semiconductor die, forming resist material on the laser direct structuring material, producing mutually aligned patterns of electrically-conductive formations in the laser direct structuring material and etched-out portions of the resist material having lateral walls sidewise of said electrically-conductive formations via laser beam energy, and forming electrically-conductive material at said etched-out portions of the resist material, the electrically-conductive material having lateral confinement surfaces at said lateral walls of said etched-out portions of the resist material.

Patent Agency Ranking