THIN FILM TRANSISTOR ARRAY PANEL
    2.
    发明申请

    公开(公告)号:US20190296153A1

    公开(公告)日:2019-09-26

    申请号:US16354396

    申请日:2019-03-15

    Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

    THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    薄膜晶体管基板及其制造方法

    公开(公告)号:US20140239290A1

    公开(公告)日:2014-08-28

    申请号:US14055933

    申请日:2013-10-17

    Inventor: Hyeon Sik KIM

    CPC classification number: H01L29/7869 H01L29/66969 H01L29/78618

    Abstract: The TFT substrate includes a gate electrode disposed on an insulating substrate; a gate insulating layer disposed on the gate electrode; a source/drain electrode disposed on the gate insulating layer; and an oxide semiconductor layer disposed between the gate insulating layer and the source/drain electrode. The oxide semiconductor layer includes a first portion that does not contact the source/drain electrode and in which a channel region is defined and a second portion in which a contact region that contacts the source/drain electrode is defined. The second portion includes a first oxide semiconductor layer and a second oxide semiconductor layer disposed on the first oxide semiconductor layer.

    Abstract translation: TFT基板包括设置在绝缘基板上的栅电极; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的源极/漏极; 以及设置在栅极绝缘层和源极/漏极之间的氧化物半导体层。 氧化物半导体层包括不接触源极/漏极并且其中限定沟道区的第一部分和限定了与源极/漏极接触的接触区域的第二部分。 第二部分包括设置在第一氧化物半导体层上的第一氧化物半导体层和第二氧化物半导体层。

    SCAN SIGNAL DRIVER AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20240242679A1

    公开(公告)日:2024-07-18

    申请号:US18466047

    申请日:2023-09-13

    CPC classification number: G09G3/3266 G09G3/32 G09G2310/0267 G09G2330/06

    Abstract: A design for a scan driver and a display device including the scan driver that is more resilient to electrostatic discharge. Thin film transistors within a stage are designed differently depending on whether or not a gate of the transistor is connected to an external source. Transistors whose gate is connected to an external source is specially designed to withstand electrostatic discharge applied to the gate thereof by one or more of increasing a number of channel areas, decreasing a length of an ohmic bridge, including a resistive element to the gate, decreasing a width of a channel areas, and increasing a width of the active layer.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE

    公开(公告)号:US20250048840A1

    公开(公告)日:2025-02-06

    申请号:US18407446

    申请日:2024-01-09

    Abstract: According to an embodiment of the disclosure, a display device is provided. The display device includes a base layer including a display area and a peripheral area, a light emitting element disposed in the display area and including a first electrode, a second electrode, and a light emitting part disposed between the first electrode and the second electrode, an electrode disconnection member disposed in the peripheral area, and an electrode portion disposed adjacent to the electrode disconnection member. The electrode disconnection member includes a reverse-taper member surrounding an area in a plan view. The reverse-taper member includes an inner edge facing the area. The electrode portion includes a first electrode portion disposed in the area and a second electrode portion disposed on an upper surface of the reverse-taper member along the inner edge. The first electrode portion and the second electrode portion are physically spaced apart from each other.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20250031525A1

    公开(公告)日:2025-01-23

    申请号:US18616215

    申请日:2024-03-26

    Abstract: A display device and a method of fabricating the same are provided. The display device comprises a substrate, a transistor disposed on the substrate, a via layer disposed over the transistor and including a contact hole extending to the transistor, a pixel electrode disposed on the via layer and connected to the transistor through the contact hole, a first bank layer disposed on the pixel electrode and extending in a first direction, and a second bank layer extended in a second direction crossing the first direction, a light emitting layer disposed on the pixel electrode, and a common electrode disposed on the light emitting layer, wherein the second bank layer comprises a first region that does not overlap the contact hole and a second region that overlaps the contact hole, and wherein a width of the second region is greater than a width of the first region.

    DISPLAY DEVICE
    9.
    发明申请

    公开(公告)号:US20240431132A1

    公开(公告)日:2024-12-26

    申请号:US18413983

    申请日:2024-01-16

    Abstract: A display device includes a first substrate including an emission area and a non-emission area; a first pixel electrode positioned on the emission area of the first substrate; a first light emitting structure positioned on the first pixel electrode and including quantum dots; a pixel defining layer positioned on the non-emission area of the first substrate and positioned on the first pixel electrode; a common electrode covering the first light emitting structure and the pixel defining layer; and an encapsulation structure positioned on the common electrode and in contact with the common electrode such that the encapsulation structure overlaps the non-emission area. The encapsulation structure may include a second substrate and a hydrogen donor layer positioned between the second substrate and the common electrode. The hydrogen donor layer may overlap the emission area and may be in contact with or spaced apart from the common electrode.

    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME 审中-公开
    有机发光二极管显示器及其制造方法

    公开(公告)号:US20160218151A1

    公开(公告)日:2016-07-28

    申请号:US14879753

    申请日:2015-10-09

    Abstract: Disclosed herein is an organic light emitting diode display, including: an insulating substrate including a display area in which a plurality of pixels are formed and a peripheral area positioned around the display area; a touch signal transfer wiring positioned in the peripheral area on the insulating substrate; an insulating layer formed on the insulating substrate, the insulating layer covering the touch signal transfer wiring and including a protrusion and an opening through which the touch signal transfer wiring is partially exposed; a connection conductor connected to the touch signal transfer wiring through the opening; an encapsulation substrate including a touch area corresponding to the display area and a peripheral area positioned around the touch area; a touch electrode layer positioned under the touch area of the encapsulation substrate; and a touch wiring connected to the touch electrode layer and positioned under the peripheral area of the encapsulation substrate.

    Abstract translation: 这里公开了一种有机发光二极管显示器,包括:绝缘基板,包括形成有多个像素的显示区域和位于显示区域周围的周边区域; 定位在所述绝缘基板上的周边区域中的触摸信号传输线; 绝缘层,形成在所述绝缘基板上,所述绝缘层覆盖所述触摸信号传输布线,并且包括突起和所述触摸信号传输布线部分露出的开口; 通过开口连接到触摸信号传输线的连接导体; 包括与所述显示区域对应的触摸区域和位于所述触摸区域周围的周边区域的封装基板; 位于所述封装基板的触摸区域下方的触摸电极层; 以及连接到触摸电极层并位于封装衬底的周边区域下方的触摸线。

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