Abstract:
A method of manufacturing a display apparatus is presented. The method includes sequentially forming a conductive layer and a low reflection layer above a substrate; forming a first low reflection layer including a lower layer having conductivity and an upper layer above the lower layer, a pixel electrode, and a low reflection etching layer above the pixel electrode by patterning the conductive layer and the low reflection layer; forming a pixel-defining layer above the first low reflection layer and having an opening exposing at least a part of the low reflection etching layer; exposing the pixel electrode by etching at least a part of the low reflection etching layer by using the pixel-defining layer as a mask; forming an intermediate layer above the exposed pixel electrode, the intermediate layer comprising an organic emission layer; and forming an opposite electrode above the intermediate layer.
Abstract:
A display device includes a substrate including a first substrate portion including a first area, a second substrate portion including a second area, and a bending area between the first substrate portion and the second substrate portion, the substrate being bendable around a bending axis that extends in a first direction, an encapsulation portion over the first substrate portion, an intermediate wiring including a first intermediate wiring portion in the first area and a second intermediate wiring portion in the second area, and a connection wiring including at least a portion in the bending area and connecting the first intermediate wiring portion to the second intermediate wiring portion.
Abstract:
Provided is a thin film transistor array substrate having at least one thin film transistor. The thin film transistor includes a semiconductor layer having a channel area with a first doping concentration on a substrate, a source-drain area disposed at opposite sides of the channel area and with a second doping concentration greater than the first doping concentration, and a substantially undoped area extending from the source-drain area. The substrate has a gate insulating layer on the semiconductor layer and a gate electrode disposed on the gate insulating layer and overlapping the channel area in at least some portions. The substrate has a source electrode and a drain electrode, each insulated from the gate electrode and electrically connected to the source-drain area. The gate electrode includes a first gate electrode layer and a second gate electrode layer, wherein the second gate electrode layer is thicker than the first gate electrode layer.
Abstract:
A display apparatus includes: a substrate; a pixel electrode above the substrate; a first low reflection layer spaced apart from the pixel electrode at a same layer as the pixel electrode and comprising a lower layer having conductivity and an upper layer above the lower layer; a pixel-defining layer above the first low reflection layer and having an opening exposing at least a part of the pixel electrode; an intermediate layer above the pixel electrode and comprising an organic emission layer; and an opposite electrode above the intermediate layer.
Abstract:
Provided is a thin film transistor array substrate having at least one thin film transistor. The thin film transistor includes a semiconductor layer having a channel area with a first doping concentration on a substrate, a source-drain area disposed at opposite sides of the channel area and with a second doping concentration greater than the first doping concentration, and a substantially undoped area extending from the source-drain area. The substrate has a gate insulating layer on the semiconductor layer and a gate electrode disposed on the gate insulating layer and overlapping the channel area in at least some portions. The substrate has a source electrode and a drain electrode, each insulated from the gate electrode and electrically connected to the source-drain area. The gate electrode includes a first gate electrode layer and a second gate electrode layer, wherein the second gate electrode layer is thicker than the first gate electrode layer.
Abstract:
A display apparatus includes a lower substrate including a peripheral area around a display area, an upper substrate facing the lower substrate, a display unit in the display area including a pixel circuit and a display device electrically connected to the pixel circuit, a seal in the peripheral area to surround the display unit, the seal adhering the lower substrate to the upper substrate, a power supply line between the lower substrate and the seal such that at least a portion of the power supply line and the seal overlap each other, and a first thermally conductive layer between the power supply line and the lower substrate, at least a part of the first thermally conductive layer overlapping an end portion of the power supply line, the first thermally conductive layer being connected to the power supply line and extending toward an edge of the lower substrate.
Abstract:
A display apparatus includes a substrate, a display unit, a pad portion, and a connection wire. The display unit is on the substrate. The display unit includes a pixel circuit and a display device electrically connected to the pixel circuit. The pad portion is at one side of a peripheral area outside the display unit. The pad portion includes a first conductive layer, a second conductive layer arranged on and electrically connected to the first conductive layer, and a third conductive layer arranged on and electrically connected to the second conductive layer. The connection wire connects the pad portion and the display unit to each other to transmit a signal input to the pad portion to the display device. The connection wire includes a same material as that of the first conductive layer.
Abstract:
A display device includes a substrate including a first substrate portion including a first area, a second substrate portion including a second area, and a bending area between the first substrate portion and the second substrate portion, the substrate being bendable around a bending axis that extends in a first direction, an encapsulation portion over the first substrate portion, a seal portion between the first substrate portion and the encapsulation portion to bond the first substrate portion to the encapsulation portion, an intermediate wiring including a first intermediate wiring portion in the first area and a second intermediate wiring portion in the second area, the intermediate wiring being covered by at least one inorganic layer, and a connection wiring including at least a portion in the bending area and connecting the first intermediate wiring portion to the second intermediate wiring portion.
Abstract:
A method of manufacturing a display apparatus is presented. The method includes sequentially forming a conductive layer and a low reflection layer above a substrate; forming a first low reflection layer including a lower layer having conductivity and an upper layer above the lower layer, a pixel electrode, and a low reflection etching layer above the pixel electrode by patterning the conductive layer and the low reflection layer; forming a pixel-defining layer above the first low reflection layer and having an opening exposing at least a part of the low reflection etching layer; exposing the pixel electrode by etching at least a part of the low reflection etching layer by using the pixel-defining layer as a mask; forming an intermediate layer above the exposed pixel electrode, the intermediate layer comprising an organic emission layer; and forming an opposite electrode above the intermediate layer.
Abstract:
A display apparatus includes: a substrate; a pixel electrode above the substrate; a first low reflection layer spaced apart from the pixel electrode at a same layer as the pixel electrode and comprising a lower layer having conductivity and an upper layer above the lower layer; a pixel-defining layer above the first low reflection layer and having an opening exposing at least a part of the pixel electrode; an intermediate layer above the pixel electrode and comprising an organic emission layer; and an opposite electrode above the intermediate layer.