公开(公告)号：US20230215983A1

公开(公告)日：2023-07-06

申请号：US18093959

申请日：2023-01-06

Applicant: Samsung Display Co., LTD.

Inventor： Mi Hyang SHEEN ,  Yun Hyuk KO ,  Dong Uk KIM ,  Na Ri AHN ,  Chang Hee LEE ,  Do Hyung KIM ,  Ran KIM ,  In Pyo KIM ,  Ki Young YEON ,  Je Won YOO ,  Joo Hee LEE ,  Sang Ho JEON ,  Jung Woon JUNG ,  Chan Woo JOO ,  Jin Young CHOI ,  Na Mi HONG ,  Jong Il KIM ,  Jin Ho BYUN ,  Sang Ho OH ,  Jae Kwang LEE ,  Yong Seok CHOI ,  Jong Hoon HA

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/20 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/005 ,  H01L33/62 ,  H01L2933/0016

Abstract: A method for fabricating a light emitting element includes preparing a substrate, and forming a first semiconductor material layer, a light emitting material layer, a second semiconductor material layer and an electrode material layer on the substrate, forming semiconductor rods spaced apart from each other by etching the first semiconductor material layer, the light emitting material layer, the second semiconductor material layer and the electrode material layer in a direction perpendicular to an upper surface of the substrate, forming an insulating layer surrounding sides of the semiconductor rods through a sol-gel process by immersing the substrate, including the semiconductor rods, in a solution containing a precursor material, and forming light emitting elements by separating the semiconductor rods, including the insulating layer, from the substrate, and the light emitting elements have an external quantum efficiency of 20.2±0.6%.

公开(公告)号：US20210313536A1

公开(公告)日：2021-10-07

申请号：US17197970

申请日：2021-03-10

Applicant: Samsung Display Co., Ltd.

Inventor： Jin Young CHOI ,  Sang Hoon YIM ,  Dong Hoon KIM ,  Jin Sook BANG ,  Jin Wook JEONG ,  Eun Jeong HONG

IPC: H01L51/50

Abstract: An organic light-emitting display device includes: a plurality of pattern electrodes; a hole-transporting layer disposed on the plurality of pattern electrodes; a plurality of emission layers disposed on the hole-transporting layer and overlapping the plurality of pattern electrodes, respectively; a common electrode disposed on the emission layers; and a first auxiliary layer disposed between a first one of the pattern electrodes and a first one of the emission layers, wherein the first emission layer forms an interface with the hole-transporting layer or the first auxiliary layer, the interface having a hole barrier equal to or less than about 0.1 eV, wherein the hole-transporting layer and the first auxiliary layer have a hole mobility equal to or less than about 1.0×10−3 cm2/V·s.