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1.发明公开公开(公告)号：US20240313162A1
公开(公告)日：2024-09-19
申请号：US18603318
申请日：2024-03-13
发明人： Sang Ho PARK , Sang Ho JEON , Sung Hoon KIM
IPC分类号： H01L33/32 , H01L25/075 , H01L33/00 , H01L33/62
CPC分类号： H01L33/32 , H01L25/0753 , H01L33/0075 , H01L33/62
摘要： Provided herein is a light emitting element including a semiconductor stack structure including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer; an intermediate passivation structure disposed on a side surface of the semiconductor stack structure; and an insulating layer disposed on the intermediate passivation structure, and including a metal oxide. The intermediate passivation structure includes a crystal structure including nitrogen (N) and material forming the semiconductor stack structure.
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2.发明公开公开(公告)号：US20240339561A1
公开(公告)日：2024-10-10
申请号：US18604563
申请日：2024-03-14
发明人： Ji Song CHAE , Dae Hyun KIM , Sang Ho PARK , Jae Woong YOO , Chul Jong YOO , Sang Hoon LEE , Joo Hee LEE , Jin Hyuk JANG , Sang Ho JEON , Seon Hong CHOI
CPC分类号： H01L33/025 , H01L25/167 , H01L33/0066 , H01L33/44 , H01L2933/0025
摘要： A light emitting element may include a semiconductor stack structure including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, and an insulating layer disposed on a side portion of the semiconductor stack structure. The semiconductor stack structure may include a fluorinated area disposed adjacent to the insulating layer.
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公开(公告)号：US20220013737A1
公开(公告)日：2022-01-13
申请号：US17281665
申请日：2019-07-24
发明人： Sun Woo KANG , Sang Ho JEON , Young Mi CHO
摘要： Provided is an organic light-emitting device including: an anode; a cathode facing the anode; and an organic layer arranged between the anode and the cathode and including an emission layer and an auxiliary layer, wherein the emission layer is in direct contact with the auxiliary layer, the emission layer includes a dopant, the auxiliary layer includes a first compound and a second compound, and the dopant, the first compound, and the second compound satisfy a certain equation.
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公开(公告)号：US20230215983A1
公开(公告)日：2023-07-06
申请号：US18093959
申请日：2023-01-06
发明人： Mi Hyang SHEEN , Yun Hyuk KO , Dong Uk KIM , Na Ri AHN , Chang Hee LEE , Do Hyung KIM , Ran KIM , In Pyo KIM , Ki Young YEON , Je Won YOO , Joo Hee LEE , Sang Ho JEON , Jung Woon JUNG , Chan Woo JOO , Jin Young CHOI , Na Mi HONG , Jong Il KIM , Jin Ho BYUN , Sang Ho OH , Jae Kwang LEE , Yong Seok CHOI , Jong Hoon HA
IPC分类号： H01L33/38 , H01L25/075 , H01L33/20 , H01L33/00 , H01L33/62
CPC分类号： H01L33/382 , H01L25/0753 , H01L33/20 , H01L33/005 , H01L33/62 , H01L2933/0016
摘要： A method for fabricating a light emitting element includes preparing a substrate, and forming a first semiconductor material layer, a light emitting material layer, a second semiconductor material layer and an electrode material layer on the substrate, forming semiconductor rods spaced apart from each other by etching the first semiconductor material layer, the light emitting material layer, the second semiconductor material layer and the electrode material layer in a direction perpendicular to an upper surface of the substrate, forming an insulating layer surrounding sides of the semiconductor rods through a sol-gel process by immersing the substrate, including the semiconductor rods, in a solution containing a precursor material, and forming light emitting elements by separating the semiconductor rods, including the insulating layer, from the substrate, and the light emitting elements have an external quantum efficiency of 20.2±0.6%.
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公开(公告)号：US20230163234A1
公开(公告)日：2023-05-25
申请号：US17967177
申请日：2022-10-17
发明人： Jae Woong YOO , Jin Hyuk JANG , Sung Hwi PARK , Sang Ho JEON , Seon Hong CHOI
CPC分类号： H01L33/025 , H01L27/156 , H01L33/145 , H01L33/24 , H01L33/44
摘要： A light emitting element includes a light emitting element core including a first area and a second area surrounding the first area. The light emitting element core includes a first semiconductor layer doped with a first dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a second dopant, an element active layer disposed between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer disposed between the element active layer and the second semiconductor layer and doped with the second dopant. The second area of the light emitting element core is located on an outer circumference of the light emitting element core and includes an outer surface of the light emitting element core. A doping concentration of the second dopant of the third semiconductor layer is lower than a defect density of the second area of the light emitting element core.
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公开(公告)号：US20220344536A1
公开(公告)日：2022-10-27
申请号：US17585864
申请日：2022-01-27
发明人： Won Ho LEE , Seung A LEE , Jin Hyuk JANG , Jong Hyuk KANG , Hyun Deok IM , Sang Ho JEON , Eun A CHO , Hyun Min CHO
摘要： A light-emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and an insulating film that surrounds the first semiconductor layer, the second semiconductor layer, and the light emitting layer. A doping concentration of the first semiconductor layer is in a predetermined range. A display device includes the light-emitting element.
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7.发明公开公开(公告)号：US20240097069A1
公开(公告)日：2024-03-21
申请号：US18296016
申请日：2023-04-05
发明人： Sang Ho JEON , Ji Song CHAE
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/0083 , H01L33/28 , H01L33/32 , H01L25/167
摘要： A light emitting element includes an N-type semiconductor layer including a zinc oxide semiconductor, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer. The active layer has a quantum well including a barrier layer and a well layer including zinc oxide.
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公开(公告)号：US20240038748A1
公开(公告)日：2024-02-01
申请号：US18348995
申请日：2023-07-07
发明人： Jae Woong YOO , Jin Hyuk JANG , Sang Ho JEON
IPC分类号： H01L25/16
CPC分类号： H01L25/167 , H01L33/20
摘要： A display device including: electrodes on a base layer; an insulating layer on the electrodes and including a first protruding pattern and a second protruding pattern; light emitting elements on the insulating layer, a light emitting element from among the light emitting elements including a first end and a second end, wherein the light emitting elements include a first light emitting element, the first end of the first light emitting element being adjacent to the first protruding pattern, and the second end of the first light emitting element being adjacent to the second protruding pattern; a first connecting electrode electrically connected to the first end of the first light emitting element and including a first base portion and first protruding portions connected to the first base portion; and a second connecting electrode electrically connected to the second end of the first light emitting element.
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9.发明公开公开(公告)号：US20240266475A1
公开(公告)日：2024-08-08
申请号：US18636248
申请日：2024-04-15
发明人： Jun Bo SIM , Chang Hee LEE , Yun Hyuk KO , Sang Ho JEON , Jae Kook HA
IPC分类号： H01L33/44 , H01L25/075 , H01L25/16 , H01L33/00 , H01L33/62
CPC分类号： H01L33/44 , H01L25/0753 , H01L25/167 , H01L33/007 , H01L33/0075 , H01L33/0093 , H01L33/62 , H01L2933/0025
摘要： A light emitting element includes: a light emitting stack pattern including a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked along one direction; and an insulating film surrounding an outer surface of at least one of the first semiconductor layer, the active layer, and the second semiconductor layer. The insulating film including a zinc oxide (ZnO) thin film layer.
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10.发明公开公开(公告)号：US20240145636A1
公开(公告)日：2024-05-02
申请号：US18499136
申请日：2023-10-31
发明人： Sang Ho PARK , Sang Ho JEON , Sung Hoon KIM
CPC分类号： H01L33/44 , H01L27/156 , H01L33/0075 , H01L33/24 , H01L33/32 , H01L2933/0025
摘要： One or more embodiments of the disclosure provides a light-emitting element including an N-type semiconductor layer, a P-type semiconductor layer, an active layer between the N-type semiconductor layer and the P-type semiconductor layer, and an insulating layer on a semiconductor stacked structure including the N-type semiconductor layer, the P-type semiconductor layer, and the active layer, and including a first insulating structure and a second insulating structure, the first insulating structure being between the semiconductor stacked structure and the second insulating structure and including a metal oxide including two or more metal elements.
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