公开(公告)号：US20240339561A1

公开(公告)日：2024-10-10

申请号：US18604563

申请日：2024-03-14

Applicant: Samsung Display Co., LTD.

Inventor： Ji Song CHAE ,  Dae Hyun KIM ,  Sang Ho PARK ,  Jae Woong YOO ,  Chul Jong YOO ,  Sang Hoon LEE ,  Joo Hee LEE ,  Jin Hyuk JANG ,  Sang Ho JEON ,  Seon Hong CHOI

IPC: H01L33/02 ,  H01L25/16 ,  H01L33/00 ,  H01L33/44

CPC classification number: H01L33/025 ,  H01L25/167 ,  H01L33/0066 ,  H01L33/44 ,  H01L2933/0025

Abstract: A light emitting element may include a semiconductor stack structure including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, and an insulating layer disposed on a side portion of the semiconductor stack structure. The semiconductor stack structure may include a fluorinated area disposed adjacent to the insulating layer.

公开(公告)号：US20230215983A1

公开(公告)日：2023-07-06

申请号：US18093959

申请日：2023-01-06

Applicant: Samsung Display Co., LTD.

Inventor： Mi Hyang SHEEN ,  Yun Hyuk KO ,  Dong Uk KIM ,  Na Ri AHN ,  Chang Hee LEE ,  Do Hyung KIM ,  Ran KIM ,  In Pyo KIM ,  Ki Young YEON ,  Je Won YOO ,  Joo Hee LEE ,  Sang Ho JEON ,  Jung Woon JUNG ,  Chan Woo JOO ,  Jin Young CHOI ,  Na Mi HONG ,  Jong Il KIM ,  Jin Ho BYUN ,  Sang Ho OH ,  Jae Kwang LEE ,  Yong Seok CHOI ,  Jong Hoon HA

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/20 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/005 ,  H01L33/62 ,  H01L2933/0016

Abstract: A method for fabricating a light emitting element includes preparing a substrate, and forming a first semiconductor material layer, a light emitting material layer, a second semiconductor material layer and an electrode material layer on the substrate, forming semiconductor rods spaced apart from each other by etching the first semiconductor material layer, the light emitting material layer, the second semiconductor material layer and the electrode material layer in a direction perpendicular to an upper surface of the substrate, forming an insulating layer surrounding sides of the semiconductor rods through a sol-gel process by immersing the substrate, including the semiconductor rods, in a solution containing a precursor material, and forming light emitting elements by separating the semiconductor rods, including the insulating layer, from the substrate, and the light emitting elements have an external quantum efficiency of 20.2±0.6%.