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公开(公告)号:US20230215983A1
公开(公告)日:2023-07-06
申请号:US18093959
申请日:2023-01-06
Applicant: Samsung Display Co., LTD.
Inventor: Mi Hyang SHEEN , Yun Hyuk KO , Dong Uk KIM , Na Ri AHN , Chang Hee LEE , Do Hyung KIM , Ran KIM , In Pyo KIM , Ki Young YEON , Je Won YOO , Joo Hee LEE , Sang Ho JEON , Jung Woon JUNG , Chan Woo JOO , Jin Young CHOI , Na Mi HONG , Jong Il KIM , Jin Ho BYUN , Sang Ho OH , Jae Kwang LEE , Yong Seok CHOI , Jong Hoon HA
IPC: H01L33/38 , H01L25/075 , H01L33/20 , H01L33/00 , H01L33/62
CPC classification number: H01L33/382 , H01L25/0753 , H01L33/20 , H01L33/005 , H01L33/62 , H01L2933/0016
Abstract: A method for fabricating a light emitting element includes preparing a substrate, and forming a first semiconductor material layer, a light emitting material layer, a second semiconductor material layer and an electrode material layer on the substrate, forming semiconductor rods spaced apart from each other by etching the first semiconductor material layer, the light emitting material layer, the second semiconductor material layer and the electrode material layer in a direction perpendicular to an upper surface of the substrate, forming an insulating layer surrounding sides of the semiconductor rods through a sol-gel process by immersing the substrate, including the semiconductor rods, in a solution containing a precursor material, and forming light emitting elements by separating the semiconductor rods, including the insulating layer, from the substrate, and the light emitting elements have an external quantum efficiency of 20.2±0.6%.
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公开(公告)号:US20220158030A1
公开(公告)日:2022-05-19
申请号:US17479980
申请日:2021-09-20
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Mi Hyang SHEEN , Ki Young YEON , Do Hyung KIM , Kyung Lae RHO , Na Ri AHN
IPC: H01L33/24 , H01L33/00 , H01L25/075 , H01L33/12
Abstract: A method of manufacturing a light-emitting element, and a light-emitting element array substrate and a display device including the same are provided. A method of manufacturing a light-emitting element includes: forming a base substrate including a plurality of protrusions and a rod area which is a remaining area except for the plurality of protrusions; forming a buffer layer on the base substrate; forming a semiconductor structure including a first semiconductor material layer, a light-emitting material layer, and a second semiconductor material layer on the buffer layer; forming a plurality of mask patterns overlapping the rod area on the semiconductor structure; forming element rods by removing the semiconductor structure overlapping the plurality of protrusions using the plurality of mask patterns; forming an insulating film around an outer surface of each of the element rods. and separating the element rods from the buffer layer.
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