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公开(公告)号:US20230167360A1
公开(公告)日:2023-06-01
申请号:US17994173
申请日:2022-11-25
Applicant: Samsung Display Co., Ltd. , ENF TECHNOLOGY CO., LTD.
Inventor: Hyoungsik Kim , Jonghee Park , Sehoon Kim , Boyeon Lee , Yangryeong Kim , Seokil Jung , Ikjoon Kim , Sangseung Park , Wonho Noh , Mingyeong Jeong
Abstract: An etchant composition is disclosed that provides selective etching of an indium oxide film or a sliver-containing metal layer. The etchant composition includes nitric acid, an organic acid, a sulfur compound, and a tin compound. The organic acid does not include the elements of sulfur and tin. The sulfur compound does not include the element of tin. The etchant composition may minimize the damage of a lower metal film and may exhibit excellent etching characteristics in terms of etching rate, bias, residue, precipitation, and etching uniformity.