公开(公告)号：US11081513B2

公开(公告)日：2021-08-03

申请号：US16856571

申请日：2020-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-seok Kim ,  Byung-jun Park ,  Hee-geun Jeong ,  Seung-joo Nah

IPC: H01L27/146

Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.

公开(公告)号：US10304887B2

公开(公告)日：2019-05-28

申请号：US15862396

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-seok Kim ,  Byung-jun Park ,  Hee-geun Jeong ,  Seung-joo Nah

IPC: H01L27/146

Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.

公开(公告)号：US11430824B2

公开(公告)日：2022-08-30

申请号：US16839173

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Sang-il Jung ,  Byung-jun Park

IPC: H01L23/48 ,  H01L27/146

Abstract: An integrated circuit (IC) device includes a first substrate and a first structure on a front surface of the first substrate. The first structure includes a first interlayer insulating layer structure including a plurality of first conductive pad layers spaced apart from one another at different levels of the first interlayer insulating layer structure. The IC device includes a second substrate on the first substrate and a second structure on a front surface of the second substrate, which faces the front surface of the first substrate. The second structure includes a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure. A through-silicon via (TSV) structure penetrates the second substrate and the second interlayer insulating layer structure. The TSV structure is in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels.

公开(公告)号：US20200235156A1

公开(公告)日：2020-07-23

申请号：US16839173

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Sang-il Jung ,  Byung-jun Park

IPC: H01L27/146

Abstract: An integrated circuit (IC) device includes a first substrate and a first structure on a front surface of the first substrate. The first structure includes a first interlayer insulating layer structure including a plurality of first conductive pad layers spaced apart from one another at different levels of the first interlayer insulating layer structure. The IC device includes a second substrate on the first substrate and a second structure on a front surface of the second substrate, which faces the front surface of the first substrate. The second structure includes a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure. A through-silicon via (TSV) structure penetrates the second substrate and the second interlayer insulating layer structure. The TSV structure is in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels.

公开(公告)号：US20170040373A1

公开(公告)日：2017-02-09

申请号：US15227509

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Sang-il Jung ,  Byung-jun Park

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634

Abstract: An integrated circuit (IC) device includes a first substrate and a first structure on a front surface of the first substrate. The first structure includes a first interlayer insulating layer structure including a plurality of first conductive pad layers spaced apart from one another at different levels of the first interlayer insulating layer structure. The IC device includes a second substrate on the first substrate and a second structure on a front surface of the second substrate, which faces the front surface of the first substrate. The second structure includes a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure. A through-silicon via (TSV) structure penetrates the second substrate and the second interlayer insulating layer structure. The TSV structure is in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels.

Abstract translation: 集成电路（IC）装置包括在第一基板的前表面上的第一基板和第一结构。 第一结构包括第一层间绝缘层结构，其包括在第一层间绝缘层结构的不同水平处彼此间隔开的多个第一导电焊盘层。 IC器件包括在第一衬底上的第二衬底和面对第一衬底的前表面的第二衬底的前表面上的第二结构。 第二结构包括结合到第一层间绝缘层结构的第二层间绝缘层结构。 贯穿硅通孔（TSV）结构穿透第二衬底和第二层间绝缘层结构。 TSV结构与位于不同级别的多个第一导电焊盘层的至少两个第一导电焊盘层接触。

公开(公告)号：US09165974B2

公开(公告)日：2015-10-20

申请号：US14486389

申请日：2014-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-kwan Kim ,  Doo-won Kwon ,  Jeong-ki Kim ,  Wook-hwan Kim ,  Byung-jun Park ,  Seung-hun Shin ,  June-taeg Lee ,  Ha-kyu Choi ,  Tae-seok Oh

IPC: H01L31/00 ,  H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14643 ,  H01L24/80 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L2224/05547 ,  H01L2224/08121 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: An electronic device may include a first semiconductor layer, a first electrode layer on the semiconductor layer, an adhesive insulating layer on the first electrode layer, a second electrode layer on the adhesive insulating layer, a second semiconductor layer. The first electrode layer may include a first plurality of electrodes, the first electrode layer may be between the adhesive insulating layer and the first semiconductor layer, and the adhesive insulating layer may include at least one of SiOCN, SiBN, and/or BN. The second electrode layer may include a second plurality of electrodes, the adhesive insulating layer may be between the first and second electrode layers, and the second electrode layer may be between the adhesive insulating layer and the second semiconductor layer.

Abstract translation: 电子器件可以包括第一半导体层，半导体层上的第一电极层，第一电极层上的粘合绝缘层，粘合绝缘层上的第二电极层，第二半导体层。 第一电极层可以包括第一多个电极，第一电极层可以在粘合绝缘层和第一半导体层之间，并且粘合绝缘层可以包括SiOCN，SiBN和/或BN中的至少一种。 第二电极层可以包括第二多个电极，粘合绝缘层可以在第一和第二电极层之间，并且第二电极层可以在粘合绝缘层和第二半导体层之间。

公开(公告)号：US20150076649A1

公开(公告)日：2015-03-19

申请号：US14486389

申请日：2014-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-kwan KIM ,  Doo-Won Kwon ,  Jeong-ki Kim ,  Wook-hwan Kim ,  Byung-jun Park ,  Seung-hun Shin ,  June-taeg Lee ,  Ha-kyu Choi ,  Tae-Seok Oh

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L24/80 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L2224/05547 ,  H01L2224/08121 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: An electronic device may include a first semiconductor layer, a first electrode layer on the semiconductor layer, an adhesive insulating layer on the first electrode layer, a second electrode layer on the adhesive insulating layer, a second semiconductor layer. The first electrode layer may include a first plurality of electrodes, the first electrode layer may be between the adhesive insulating layer and the first semiconductor layer, and the adhesive insulating layer may include at least one of SiOCN, SiBN, and/or BN. The second electrode layer may include a second plurality of electrodes, the adhesive insulating layer may be between the first and second electrode layers, and the second electrode layer may be between the adhesive insulating layer and the second semiconductor layer.

Abstract translation: 电子器件可以包括第一半导体层，半导体层上的第一电极层，第一电极层上的粘合绝缘层，粘合绝缘层上的第二电极层，第二半导体层。 第一电极层可以包括第一多个电极，第一电极层可以在粘合绝缘层和第一半导体层之间，并且粘合绝缘层可以包括SiOCN，SiBN和/或BN中的至少一种。 第二电极层可以包括第二多个电极，粘合绝缘层可以在第一和第二电极层之间，并且第二电极层可以在粘合绝缘层和第二半导体层之间。