公开(公告)号：US20180006055A1

公开(公告)日：2018-01-04

申请号：US15708266

申请日：2017-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kihyun KIM ,  Chadong YEO

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11575 ,  H01L27/1157

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11578

Abstract: A three-dimensional semiconductor memory device is provided. A stacked structure is formed on a substrate. The stacked structure includes conductive patterns vertically stacked on the substrate. A selection structure including selection conductive patterns is stacked on the stacked structure. A channel structure penetrates the selection structure and the stacked structure to connect to the substrate. An upper interconnection line crosses the selection structure. A conductive pad is disposed on the channel structure to electrically connect the upper interconnection line to the channel structure. A bottom surface of the conductive pad is positioned below a top surface of the uppermost selection conductive pattern of the selection conductive patterns.

公开(公告)号：US20240324206A1

公开(公告)日：2024-09-26

申请号：US18581174

申请日：2024-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungik YOO ,  Seungbeom KO ,  Taemok GWON ,  Changjin SON ,  Chadong YEO ,  Seulji LEE ,  Seungmin LEE

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/41 ,  H10B43/40

CPC classification number: H10B43/27 ,  H10B41/27 ,  H10B41/41 ,  H10B43/40

Abstract: A nonvolatile memory device includes a substrate including a memory cell region and a connection region; a mold structure including a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked; a channel structure passing through the mold structure in the memory cell region; a first cell contact passing through the mold structure in the connection region, connected to a first gate electrode and electrically disconnected from a second gate electrode; a plurality of support structures surrounding the first cell contact planarly in the connection region and extending through the mold structure; and a dam structure located between the first cell contact and the second gate electrode in the connection region and apart from the first cell contact with an insulating ring therebetween.