公开(公告)号：US20170125257A1

公开(公告)日：2017-05-04

申请号：US15243128

申请日：2016-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cha-Won KOH ,  Cheol-Hong PARK ,  Hyun-Woo KIM ,  Jin-Kyu HAN

IPC: H01L21/308

CPC classification number: H01L21/3088 ,  B81C1/00952 ,  G03F7/40 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/3085 ,  H01L21/3086

Abstract: Example embodiments relate to a method of forming a photoresist pattern and a method of fabricating a semiconductor device using the same. The method of fabricating a semiconductor device comprises forming a mask layer on a substrate, forming a photoresist pattern on the mask layer, the photoresist pattern having pattern portions at a first height and recess portions, applying a first liquid onto the photoresist pattern, filling the recess portions with a pattern filler at a second height, the pattern filler having an higher etch rate than the etch rate of the pattern portions to the same etchant, removing the first liquid, etching the pattern filler after removing the first liquid, etching the mask layer via the photoresist pattern to form a mask pattern, and etching the substrate via the mask pattern to form a fine pattern.

公开(公告)号：US20160358778A1

公开(公告)日：2016-12-08

申请号：US15047659

申请日：2016-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheol-Hong PARK ,  Sang-Yoon WOO ,  Cha-Won KOH ,  Hyun-Woo KIM ,  Sang-Min PARK

IPC: H01L21/033 ,  H01L27/108 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/20 ,  G03F7/091 ,  G03F7/11 ,  G03F7/32 ,  H01L21/0276 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L27/10876

Abstract: In a method of forming a pattern, a lower coating layer and a photoresist layer are sequentially formed on an object layer. An exposure process may be performed such that the photoresist layer is divided into an exposed portion and a non-exposed portion. A portion of the lower coating layer overlapping or contacting the exposed portion is at least partially transformed into a polarity conversion portion that has a polarity substantially identical to that of the exposed portion. The non-exposed portion of the photoresist layer is selectively removed.

Abstract translation: 在形成图案的方法中，在目标层上依次形成下涂层和光致抗蚀剂层。 可以进行曝光处理，使得光致抗蚀剂层被分成暴露部分和非曝光部分。 与暴露部分重叠或接触的下部涂层的一部分至少部分地转变成具有与暴露部分的极性基本相同的极性的极性转换部分。 选择性地去除光致抗蚀剂层的未曝光部分。