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    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 有权

    公开(公告)号：US20210242320A1

    公开(公告)日：2021-08-05

    申请号：US17222474

    申请日：2021-04-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junghwan HUH ,  Dongchan KIM ,  Dae Hyun KIM ,  Euiju KIM ,  Jisoo LEE

    IPC: H01L29/423 ,  H01L29/78 ,  H01L29/51 ,  H01L29/49

    Abstract: A semiconductor device includes a substrate including an active region, a gate trench disposed in the substrate and crossing the active region; a gate dielectric layer disposed in the gate trench; a first gate electrode disposed on the gate dielectric layer and including center and edge portions; a second gate electrode disposed on the first gate electrode; a gate capping insulating layer disposed on the second gate electrode and filling the gate trench; and first and second impurity regions disposed in the substrate opposite to each other with respect to the gate trench. A top surface of each of the center and edge portions contacts a bottom surface of the second gate electrode. The top surface of the second gate electrode is concave. The bottom surface of the gate capping insulating layer is convex, and a side surface of the gate capping insulating layer contacts the gate dielectric layer.

    SEMICONDUCTOR MEMORY DEVICE, CONTROLLER, AND MEMORY SYSTEM
    3.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE, CONTROLLER, AND MEMORY SYSTEM 审中-公开

    公开(公告)号：US20200133768A1

    公开(公告)日：2020-04-30

    申请号：US16372047

    申请日：2019-04-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Myung Kyu LEE ,  Jun Jin KONG ,  Ki Jun LEE ,  Sung Hye CHO ,  Dae Hyun KIM ,  Yong Gyu CHU

    IPC: G06F11/10 ,  G11C29/52 ,  H03M13/29

    Abstract: Disclosed are a semiconductor memory device, a controller, and a memory system. The semiconductor memory device includes a memory cell array including a plurality of memory cells, and an error correcting code (ECC) decoder configured to receive first data and a parity output from selected memory cells of the memory cell array. The ECC decoder generates a syndrome based on the first data and the parity, generates a decoding status flag (DSF) indicating a type of an error of the first data by the syndrome, and outputs the second data and the DSF to an external device outside of the semiconductor memory device when a read operation of the semiconductor memory device is performed.

    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开

    公开(公告)号：US20200152753A1

    公开(公告)日：2020-05-14

    申请号：US16523529

    申请日：2019-07-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junghwan HUH ,  Dongchan KIM ,  Dae Hyun KIM ,  Euiju KIM ,  Jisoo LEE

    IPC: H01L29/423 ,  H01L29/78 ,  H01L29/49 ,  H01L29/51

    Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a gate trench crossing an active region, and a gate structure in the gate trench. The gate structure includes a gate dielectric layer disposed on an inner wall of the gate trench, a gate electrode disposed on the gate electric layer and partially filling the gate trench, a gate capping insulating layer disposed on the gate electrode, and a gap-fill insulating layer disposed in the gate trench and disposed on the gate capping insulating layer. The gate capping insulating layer includes a material formed by oxidizing a portion of the gate electrode, nitriding the portion of the gate electrode, or oxidizing and nitriding the portion of the gate electrode.

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