Abstract:
A semiconductor memory device includes a memory cell array, an error correction code (ECC) circuit and a control logic circuit to control the ECC circuit. The memory cell array includes memory cells and a normal cell region and a parity cell region The ECC circuit, in a normal mode, receives a main data, performs an ECC encoding on the main data to generate a parity data and stores the main data and the parity data in the normal cell region and the parity cell region. The ECC circuit, in a test mode, receives a test data including at least one error bit, stores the test data in one of the normal cell region and the parity cell region and performs an ECC decoding on the test data and one of the main data and the parity data to provide a decoding result data to an external device.
Abstract:
An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.
Abstract:
An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.
Abstract:
At least one example embodiment discloses a method of controlling a nonvolatile memory device including a plurality of blocks, each block including a plurality of physical pages. The method includes receiving a plurality of logical pages associated with a first plurality of logical addresses, respectively, and writing the first plurality of logical pages to the plurality physical addresses according to an ascending order of the logical addresses of the first plurality of logical pages.
Abstract:
A memory controller includes a joint source-channel encoder circuit and a joint source-channel decoder circuit. The joint source-channel encoder circuit source encodes received data independent of whether the received data is compressible data, performs error correction coding on the source encoded data, and stores the source encoded data in a memory device. The joint source-channel decoder circuit performs source decoding of the data read from the memory device between iterations of error correction coding of the read data, and outputs the read data to at least one of a buffer memory and a storage device interface. The joint source-channel decoder circuit performs the source decoding of the read data independent of whether the read data is compressed data.
Abstract:
A memory device includes a memory cell array including memory cells arranged in a plurality of rows; an ECC engine configured to detect an error in first data that is read from the memory cell array in response to a read command and a read address, to output a first error occurrence signal, and to correct the error in the first data; a row fail detector configured to output a fail row address, which indicates a fail row among the plurality of rows; and a flag generator configured to receive the read address, the first error occurrence signal, and the fail row address, and to generate a decoding state flag, which indicates whether an error is detected and whether an error is corrected, and a fail row flag, which indicates that a read row address included in the read address is the fail row address.
Abstract:
A memory device includes a memory cell array including memory cells arranged in a plurality of rows; an ECC engine configured to detect an error in first data that is read from the memory cell array in response to a read command and a read address, to output a first error occurrence signal, and to correct the error in the first data; a row fail detector configured to output a fail row address, which indicates a fail row among the plurality of rows; and a flag generator configured to receive the read address, the first error occurrence signal, and the fail row address, and to generate a decoding state flag, which indicates whether an error is detected and whether an error is corrected, and a fail row flag, which indicates that a read row address included in the read address is the fail row address.
Abstract:
A memory system includes a memory device, the memory device including, a memory cell array, and a compression encoder, the memory cell array including a first plurality of multi level cells (MLCs), the memory device being configured to, generate a first partial page by performing one or more first sensing operation on the first plurality of MLCs using one or more first reference voltages, output the first partial page, generate a second partial page by performing a second sensing operation on the first plurality of MLCs based on a second reference voltage, the second reference voltage having a different voltage level than the one or more first reference voltages, generate a second compressed partial page by compressing the second partial page using the compression encoder, and output the compressed second partial page.
Abstract:
A method generating a cryptographic key and corresponding helper data includes measuring an analog value associated with a physical property of cells of a memory array; digitizing the measured analog value to generate the cryptographic key; quantizing the measured analog value to generate the corresponding non-leaky helper data.
Abstract:
Example embodiments disclose methods and apparatuses for encoding and decoding data in a memory system. In an encoding method according to an example embodiment of inventive concepts, a codeword is generated based on a combination of data to be stored and auxiliary data according to stuck cells and an encoding matrix based on information, regarding coordinates of the stuck cells and values of the stuck cells. The generated codeword includes data corresponding to the values of the stuck cells at addresses corresponding to the coordinates of the stuck cells, in a decoding method according to an example embodiment of inventive concepts, data may be generated by multiplying an inverse matrix of the encoding matrix used for encoding by the codeword.