公开(公告)号：US20230326779A1

公开(公告)日：2023-10-12

申请号：US18042577

申请日：2020-09-15

Applicant: MiCo Ceramics Ltd. ,  Samsung Electronics Co. Ltd.

Inventor： Myungsub JUNG ,  Jun Won SEO ,  Sungyeol KIM ,  Sungyong LIM ,  Hadong JIN ,  Jaehyun CHOI

IPC: H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01L21/68785

Abstract: Disclosed are a susceptor for enabling uniform plasma treatment over the entire surface of a wafer, and a manufacturing method therefor. Provided is the susceptor comprising: a dielectric plate having an upper surface on which a wafer is loaded, and a lower surface facing same; and an inner RF electrode and an outer RF electrode that are buried in the dielectric plate, wherein, with respect to the lower surface, the height of a first plane in which the inner RF electrode is buried is less than the height of a second plane in which the outer RF electrode is buried.

公开(公告)号：US20230207294A1

公开(公告)日：2023-06-29

申请号：US17970163

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hadong JIN ,  Siyoung KOH ,  Namkyun KIM ,  Kyungmin LEE ,  Sungyong LIM ,  Sungyeol KIM ,  Seungbo SHIM

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32174 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J2237/334 ,  H01J2237/24564 ,  H01L21/6831

Abstract: Provided is a plasma control apparatus including a plasma electrode disposed in a plasma chamber and to which radio frequency (RF) power having a fundamental frequency configured to generate plasma is applied, an edge electrode disposed adjacent to the plasma electrode and corresponding to a plasma edge region, and a plasma control circuit electrically connected to the edge electrode, the plasma control circuit being configured to control an electrical boundary condition in a plasma edge boundary region of a first frequency component, a harmonic wave component generated by nonlinearity of the plasma and intermodulation distortion frequency components generated by a frequency component in the plasma chamber and each of the first frequency component and the harmonic wave component, wherein the plasma control circuit is configured to change the electrical boundary condition to control a standing wave in the plasma chamber.

公开(公告)号：US20200373126A1

公开(公告)日：2020-11-26

申请号：US16870186

申请日：2020-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyeon NA ,  Hyosin KIM ,  Seungbo SHIM ,  Hadong JIN ,  Dougyong SUNG ,  Minyoung HUR

IPC: H01J37/32

Abstract: A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.