公开(公告)号：US11086210B2

公开(公告)日：2021-08-10

申请号：US16578628

申请日：2019-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yigwon Kim ,  Sangjin Kim ,  Heeyoung Go ,  Heebom Kim ,  Hoon Kim ,  Hong-Seock Choi ,  Jinseok Heo

IPC: G03F1/24

Abstract: Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.

公开(公告)号：US10754254B1

公开(公告)日：2020-08-25

申请号：US16678274

申请日：2019-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunhee Bai ,  Jinhong Park ,  Jinseok Heo ,  Heeyoung Go ,  Seongchul Hong

IPC: G03F7/20 ,  G03F1/82 ,  G03F1/86 ,  H05G2/00

Abstract: An extreme ultraviolet (EUV) exposure apparatus includes a chamber, an EUV source in the chamber and configured to generate an EUV beam, an optical system above the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a plasma source configured to provide plasma to the reticle to electrically neutralize the reticle charged by the EUV beam.