公开(公告)号：US11086210B2

公开(公告)日：2021-08-10

申请号：US16578628

申请日：2019-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yigwon Kim ,  Sangjin Kim ,  Heeyoung Go ,  Heebom Kim ,  Hoon Kim ,  Hong-Seock Choi ,  Jinseok Heo

IPC: G03F1/24

Abstract: Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.