公开(公告)号：US09461003B1

公开(公告)日：2016-10-04

申请号：US14995467

申请日：2016-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jimyung Kim ,  Yigwon Kim ,  Suhyun Kim ,  Kwangsub Yoon ,  Bumjoon Youn ,  Narak Choi

IPC: H01L27/146 ,  H01L23/552 ,  H01L23/58 ,  H01L23/544

CPC classification number: H01L23/552 ,  G03F7/70633 ,  H01L23/5225 ,  H01L23/585

Abstract: A semiconductor device includes a circuit pattern on a substrate, a shielding pattern on the circuit pattern and constituted by a plurality of parallel bars, and lower overlay marking on the shielding pattern and constituted by a plurality of parallel bars which define parallel slits between the bars. The pitch of the bars of the shielding pattern is smaller than the pitch of the bars of the lower overlay marking.

Abstract translation: 半导体器件包括衬底上的电路图案，电路图案上的屏蔽图案并由多个平行条构成，并且在屏蔽图案上形成下覆盖标记，并且由多个平行的条构成，所述平行条在条之间形成平行的狭缝 。 屏蔽图案的条的间距小于下覆盖标记的条的间距。

公开(公告)号：US20240355757A1

公开(公告)日：2024-10-24

申请号：US18408215

申请日：2024-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonghyun Kim ,  Sangjin Kim ,  Jaesuk Park ,  Yigwon Kim ,  Changmin Park ,  Hyungju Ryu

IPC: H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54426

Abstract: The present disclosure relates to semiconductor devices and their fabrication methods. An example semiconductor device comprises a substrate including a logic cell region and a key region, a dummy active pattern on the key region, and a key pattern in the dummy active pattern. The key pattern includes a key cell that is recessed at an upper portion of the substrate. The key cell includes a bottom surface lower than a top surface of the dummy active pattern, and a plurality of inner lateral surfaces that surround the bottom surface. The inner lateral surfaces include a first inner lateral surface and a second inner lateral surface opposite to the first inner lateral surface. A ratio of a silicon atom surface density of the second inner lateral surface to a silicon atom surface density of the first inner lateral surface is in a range of about 0.9 to about 1.1.

公开(公告)号：US12051590B2

公开(公告)日：2024-07-30

申请号：US17697019

申请日：2022-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongchul Jeong ,  Sangjin Kim ,  Yigwon Kim ,  Jinhee Jang ,  Taemin Choi

IPC: H01L21/033 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/0337 ,  G03F7/2002 ,  H01L21/0206 ,  H01L21/0274

Abstract: A method of forming a pattern includes forming an etching object layer on a substrate. A photoresist layer including a metal, oxygen and an organic material is formed on the etching object layer. An exposure process is performed on the photoresist layer. A developing process is performed on the photoresist layer to form a photoresist pattern including a metal oxide. Ozone is provided onto the substrate to remove a residue of the photoresist layer that includes the organic material. The etching object layer is etched using the photoresist pattern as an etching mask.

公开(公告)号：US11086210B2

公开(公告)日：2021-08-10

申请号：US16578628

申请日：2019-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yigwon Kim ,  Sangjin Kim ,  Heeyoung Go ,  Heebom Kim ,  Hoon Kim ,  Hong-Seock Choi ,  Jinseok Heo

IPC: G03F1/24

Abstract: Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.