公开(公告)号：US20240090192A1

公开(公告)日：2024-03-14

申请号：US18125776

申请日：2023-03-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsuk CHOI ,  Yeram KIM ,  Siwoo KIM ,  Jinah KIM ,  Hyongsoo KIM ,  Seonbaek LEE

IPC: H10B12/00

CPC classification number: H10B12/033 ,  H01L28/90 ,  H10B12/315 ,  H10B12/482

Abstract: A semiconductor device may include an active pattern, a capacitor contact structure electrically connected to the active pattern, and a capacitor structure electrically connected to the capacitor contact structure. The capacitor structure may include a first lower electrode and a second lower electrode that are adjacent to each other, a supporter supporting the first and second lower electrodes, a capacitor insulating layer covering the first and second lower electrodes, and an upper electrode on the capacitor insulating layer. The supporter may include a first supporter curved sidewall connected to the first lower electrode and the second lower electrode, and the upper electrode may include an intervening electrode portion enclosed by the supporter. The first supporter curved sidewall may be convex toward the intervening electrode portion.

公开(公告)号：US20140367755A1

公开(公告)日：2014-12-18

申请号：US14475844

申请日：2014-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungmun BYUN ,  Hyongsoo KIM ,  Mansug KANG ,  Eunkee HONG

IPC: H01L27/108

CPC classification number: H01L27/10808 ,  H01L27/10852 ,  H01L28/90

Abstract: A capacitor dielectric can be between the storage node and the electrode layer. A supporting pattern can be connected to the storage node, where the supporting pattern can include at least one first pattern and at least one second pattern layered on one another, where the first pattern can include a material having an etch selectivity with respect to the second pattern.

Abstract translation: 电容器电介质可以在存储节点和电极层之间。 支撑图案可以连接到存储节点，其中支撑图案可以包括至少一个第一图案和彼此分层的至少一个第二图案，其中第一图案可以包括具有相对于第二图案的蚀刻选择性的材料 模式。

公开(公告)号：US20140120683A1

公开(公告)日：2014-05-01

申请号：US14028976

申请日：2013-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyongsoo KIM ,  Jin-Su LEE ,  Hojun KWON ,  Dongkyun PARK ,  Jiseung LEE ,  Young-Seok CHOI

IPC: H01L49/02

CPC classification number: H01L27/10817 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91

Abstract: Capacitor of a semiconductor device, and a method of fabricating the same, include sequentially forming a mold structure and a polysilicon pattern over a semiconductor substrate, patterning the mold structure using the polysilicon pattern as an etch mask to form lower electrode holes penetrating the mold structure, forming a protection layer covering a surface of the polysilicon pattern, forming lower electrodes in the lower electrode holes provided with the protection layer, removing the polysilicon pattern and the protection layer to expose upper sidewalls of the lower electrodes, removing the mold structure to expose lower sidewalls of the lower electrodes, and sequentially forming a dielectric and an upper electrode covering the lower electrodes.

Abstract translation: 半导体器件的电容器及其制造方法包括在半导体衬底上顺序地形成模具结构和多晶硅图案，使用多晶硅图案将模具结构图案化为蚀刻掩模，以形成贯穿模具结构的下部电极孔 形成覆盖多晶硅图案的表面的保护层，在设置有保护层的下电极孔中形成下电极，去除多晶硅图案和保护层以暴露下电极的上侧壁，去除模具结构暴露 下电极的下侧壁，并且依次形成覆盖下电极的电介质和上电极。