公开(公告)号：US20180358374A1

公开(公告)日：2018-12-13

申请号：US15868084

申请日：2018-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Soo KIM ,  Hyun Suk KIM ,  Soon Hyuk HONG ,  Doo Hee HWANG

IPC: H01L27/11582 ,  H01L29/423 ,  H01L29/10 ,  H01L23/532 ,  H01L23/528 ,  H01L27/11565 ,  H01L29/792

CPC classification number: H01L27/11582 ,  H01L23/5283 ,  H01L23/53271 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/1037 ,  H01L29/4234 ,  H01L29/7926

Abstract: A vertical memory device includes a gate structure including a plurality of gate electrode layers stacked on a substrate, a plurality of channel structures penetrating through the gate structure and extending in a direction perpendicular to an upper surface of the substrate, a common source line penetrating the gate structure and extending in a first direction, a metal line extended above the common source line in the first direction, and a plurality of connection portions interposed between the metal line and the common source line.

公开(公告)号：US20230019860A1

公开(公告)日：2023-01-19

申请号：US17718703

申请日：2022-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-Dong KO ,  Keon Yong CHEON ,  Dong Won KIM ,  Hyun Suk KIM ,  Sang Hyeon LEE ,  Hyung Suk LEE

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/28 ,  H01L21/8234

Abstract: A semiconductor device including a substrate; first and second active patterns on the substrate, extending in a first direction and spaced apart in a second direction; gate electrodes on the first and second active patterns and extending in the second direction; a first gate separation structure between the first and second active patterns, extending in the first direction, and separating the gate electrodes; and a first element separation structure between the gate electrodes, extending in the second direction, and separating the second active pattern, wherein a distance to a first side of a first portion of the first gate separation structure is smaller than a distance to the first side of a second portion of the first gate separation structure, and a distance to the second side of the first portion is smaller than a distance from the second active pattern to the second side of the second portion.