公开(公告)号：US20240188301A1

公开(公告)日：2024-06-06

申请号：US18347906

申请日：2023-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongyoung KIM ,  Soojung PARK ,  Hyesong JEON ,  Hyungon PYO ,  Iksoo KIM

IPC: H10B43/35 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27

Abstract: A method of manufacturing a semiconductor device may include selectively depositing a carbon layer on sidewalls of a substrate mold before depositing a sacrificial metal layer in a semiconductor device structure having a vertical stacked structure.