公开(公告)号：US20210104538A1

公开(公告)日：2021-04-08

申请号：US16882829

申请日：2020-05-26

申请人： Samsung Electronics Co., Ltd.

发明人： Changsoo LEE ,  Jongmyeong LEE ,  Iksoo KIM ,  Jiwoon IM

IPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L29/792 ,  H01L27/11573 ,  G11C7/18 ,  H01L27/11565

摘要： A semiconductor device may comprise a stack structure on a substrate, the stack structure including a plurality of dielectric layers and a plurality of transparent conductive oxide layers, the dielectric layers and the transparent conductive oxide layers are alternately stacked, each of the dielectric layers and a corresponding one of the transparent conductive oxide layer adjacent to each other in a vertical direction have equal horizontal widths, and a channel structure extending through the stack structure, the channel structure including an information storage layer, a channel layer inside the information storage layer, and a buried dielectric layer inside the channel layer.

公开(公告)号：US20220216227A1

公开(公告)日：2022-07-07

申请号：US17539523

申请日：2021-12-01

申请人： Samsung Electronics Co., Ltd.

发明人： Sangho RHA ,  Iksoo KIM ,  Jiwoon IM ,  Byungsun PARK ,  Seonkyu SHIN

IPC分类号： H01L27/11556 ,  H01L27/11582 ,  G11C5/06 ,  G11C5/02 ,  H01L29/423

摘要： A semiconductor device includes a memory cell structure on a substrate, and a dummy structure on a side of the memory cell structure. The memory cell structure includes a memory stack structure including interlayer insulating layers and gate electrodes alternately stacked on the substrate, channel structures penetrating through the memory stack structure and contacting the substrate, and first separation structures penetrating through the memory stack structure and extending in the first direction to separate the gate electrodes from each other in a second direction. The dummy structure includes dummy stack structures spaced apart from the memory stack structure and including first insulating layers and dummy gate electrodes alternately stacked, dummy channel structures penetrating through the dummy stack structures, and second separation structures penetrating through the dummy stack structures and extending in the second direction to separate the dummy gate electrodes from each other in the first direction.

公开(公告)号：US20240188301A1

公开(公告)日：2024-06-06

申请号：US18347906

申请日：2023-07-06

申请人： Samsung Electronics Co., Ltd.

发明人： Dongyoung KIM ,  Soojung PARK ,  Hyesong JEON ,  Hyungon PYO ,  Iksoo KIM

IPC分类号： H10B43/35 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27

CPC分类号： H10B43/35 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27

摘要： A method of manufacturing a semiconductor device may include selectively depositing a carbon layer on sidewalls of a substrate mold before depositing a sacrificial metal layer in a semiconductor device structure having a vertical stacked structure.

公开(公告)号：US20240172445A1

公开(公告)日：2024-05-23

申请号：US18482963

申请日：2023-10-09

申请人： Samsung Electronics Co., Ltd.

发明人： Dongyoung KIM ,  Daihong KIM ,  Iksoo KIM

IPC分类号： H10B43/27 ,  G11C16/04 ,  H01L23/522 ,  H01L23/528 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

CPC分类号： H10B43/27 ,  G11C16/0483 ,  H01L23/5226 ,  H01L23/5283 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

摘要： A semiconductor device may include gate electrodes spaced apart from each other in a first direction on a substrate and including pads in a stepped shape, a channel extending through the gate electrodes, a first through via, first and second separation insulating layers, and an insulating pattern. The gate electrodes may include second gate electrodes below a first gate electrode. The first through via may pass through and electrically connect to a first pad of the first gate electrode, pass through the second gate electrodes, and include a connection portion connected to a conductive pillar. The connection portion may contact the first pad. The first separation insulating layer may be on an upper surface of the connection portion. The second separation insulating layer may be on a bottom surface of the connection portion. The insulating pattern may be between the first through via and sidewalls of the second gate electrodes.

公开(公告)号：US20190381443A1

公开(公告)日：2019-12-19

申请号：US16412920

申请日：2019-05-15

申请人： Samsung Electronics Co., Ltd.

发明人： Jaehong KIM ,  Sangkyung LEE ,  Iksoo KIM

IPC分类号： B01D46/44 ,  B01D46/46 ,  B01D46/42 ,  G05B19/042 ,  F24F11/57

摘要： Provided are a method of transmitting a control command of a terminal apparatus, a terminal apparatus, and a computer program product. The method includes storing position information of at least one air cleaning apparatus in an indoor space; acquiring region-by-region air pollution information of the indoor space acquired while a moving cleaning apparatus moves in the indoor space; acquiring, based on the acquired region-by-region air pollution information of the indoor space and the position information of the at least one air cleaning apparatus in the indoor space, a control command for controlling an operation of the at least one air cleaning apparatus to supply clean air to a polluted region among regions of the indoor space; and transmitting the acquired control command to the at least one air cleaning apparatus.