公开(公告)号：US20250094647A1

公开(公告)日：2025-03-20

申请号：US18584489

申请日：2024-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soojung PARK ,  Yeonwoo Kim

IPC: G06F21/79 ,  G06F21/31 ,  G06F21/60

Abstract: A storage device includes a non-volatile memory including a plurality of namespaces, and a storage controller configured to receive, from an external host, a first namespace identifier of a first namespace from among the plurality of namespaces and a first command requesting to control exposure of the first namespace, and based on the first namespace identifier and the first command, set the first namespace as a hidden namespace, and prevent the first namespace from being exposed to at least one user from among a plurality of users.

公开(公告)号：US20240188301A1

公开(公告)日：2024-06-06

申请号：US18347906

申请日：2023-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongyoung KIM ,  Soojung PARK ,  Hyesong JEON ,  Hyungon PYO ,  Iksoo KIM

IPC: H10B43/35 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27

Abstract: A method of manufacturing a semiconductor device may include selectively depositing a carbon layer on sidewalls of a substrate mold before depositing a sacrificial metal layer in a semiconductor device structure having a vertical stacked structure.