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    LITHIUM SECONDARY BATTERY
    8.
    发明申请
    LITHIUM SECONDARY BATTERY 审中-公开
    锂二次电池

    公开(公告)号：US20160190646A1

    公开(公告)日：2016-06-30

    申请号：US14982812

    申请日：2015-12-29

    Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd.

    Inventor： Dongyoung KIM ,  Jinah SEO ,  Hosang PARK ,  Yoonsok KANG ,  Jungjoo CHO

    IPC: H01M10/0567 ,  H01M4/505 ,  H01M10/0568 ,  H01M4/525 ,  H01M10/052 ,  H01M10/0569

    Abstract: A lithium secondary battery including: a cathode including a high-voltage cathode active material; an anode; and an electrolyte disposed between the cathode and the anode, wherein the high-voltage cathode active material has a charge cut-off voltage of about 4.2 Volts or greater with respect to a lithium (Li) counter electrode, and wherein the electrolyte includes an organic fluorinated ether compound represented by Formula 1, an organic solvent, and a lithium salt: R1—O—CFnH2-n—R2   Formula 1 wherein, in Formula 1, R1 is a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 fluorinated alkyl group, or a C3-C10 fluorinated cycloalkyl group; R2 is hydrogen, fluorine, a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 fluorinated alkyl group, or a C3-C10 fluorinated cycloalkyl group; and n is 1 or 2.

    Abstract translation: 一种锂二次电池，包括：包括高压阴极活性材料的阴极; 阳极; 以及设置在所述阴极和所述阳极之间的电解质，其中所述高压阴极活性材料相对于锂（Li）对电极具有约4.2伏特或更大的电荷截止电压，并且其中所述电解质包括有机 由式1表示的氟化醚化合物，有机溶剂和锂盐：R1-O-CFnH2-n-R2式1其中，在式1中，R1是C1-C10烷基，C3-C10环烷基， C1-C10氟化烷基或C3-C10氟化环烷基; R2是氢，氟，C1-C10烷基，C3-C10环烷基，C1-C10氟化烷基或C3-C10氟化环烷基; n为1或2。

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权

    公开(公告)号：US20250048619A1

    公开(公告)日：2025-02-06

    申请号：US18421113

    申请日：2024-01-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yoongoo KANG ,  Dongyoung KIM ,  Jaehong PARK ,  Seokjae WON

    IPC: H10B12/00 ,  H01L23/528

    Abstract: The present inventive concepts relate to semiconductor devices and methods for fabricating the same, and a semiconductor device according to some example embodiments includes: a substrate including an active region defined by a device isolation layer; a word line that crosses and overlaps the active region; a bit line crossing the active region in a direction different from the word line; a direct contact that connects the active region and the bit line and includes a metallic material; a buried contact connected to the active region; and a bit line spacer between the bit line and the buried contact, wherein a width of the direct contact is different from that of the bit line, and the bit line spacer is on an upper surface of the direct contact.

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