公开(公告)号：US20180175043A1

公开(公告)日：2018-06-21

申请号：US15826944

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon-mok HA ,  Jae-hee KIM ,  Chan HWANG ,  Jong-hyuk KIM

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/311 ,  H01L21/027

CPC classification number: H01L27/10855 ,  H01L21/0273 ,  H01L21/31127 ,  H01L21/31144 ,  H01L27/10817 ,  H01L28/87 ,  H01L28/91

Abstract: A method of forming a micro-pattern including forming a mold layer and a supporting material layer on a substrate, patterning the mold layer and the supporting material layer to form recess patterns, forming conductor patterns in the recess patterns, removing a portion of an upper portion of the supporting material layer for causing upper portions of the conductor patterns to protrude, forming a block copolymer layer on the supporting material layer, processing the block copolymer layer to phase-separate the block copolymer layer into a plurality of block parts, selectively removing some of the phase-separated plurality of block parts, and removing the supporting material layer to expose the mold layer at a position corresponding to each of the removed block parts may be provided.

公开(公告)号：US20200152638A1

公开(公告)日：2020-05-14

申请号：US16745956

申请日：2020-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon-mok HA ,  Jae-hee KIM ,  Chan HWANG ,  Jong-hyuk KIM

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/027 ,  H01L21/311

Abstract: A method of forming a micro-pattern including forming a mold layer and a supporting material layer on a substrate, patterning the mold layer and the supporting material layer to form recess patterns, forming conductor patterns in the recess patterns, removing a portion of an upper portion of the supporting material layer for causing upper portions of the conductor patterns to protrude, forming a block copolymer layer on the supporting material layer, processing the block copolymer layer to phase-separate the block copolymer layer into a plurality of block parts, selectively removing some of the phase-separated plurality of block parts, and removing the supporting material layer to expose the mold layer at a position corresponding to each of the removed block parts may be provided.

公开(公告)号：US20200209733A1

公开(公告)日：2020-07-02

申请号：US16815219

申请日：2020-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-hee KIM ,  Chan HWANG

IPC: G03F1/26 ,  G03F1/36 ,  H01L21/283 ,  H01L21/311 ,  H01L29/41 ,  G03F1/32

Abstract: A method for fabricating a phase shift mask includes preparing a transmissive substrate on which a first mask region and a second mask region surrounding the first mask region are defined. In the first mask region, main patterns are formed having a first pitch in a first direction and a second direction perpendicular to the first direction. Each of the main patterns has a first area. In at least one row, assist patterns are formed at the first pitch to surround the main patterns. Each of the assist patterns has a second area less than the first area. In the second mask region, dummy patterns are formed in a plurality of rows. The dummy patterns surround the assist patterns at the first pitch. Each of the dummy patterns has a third area greater than the first area.

公开(公告)号：US20200089100A1

公开(公告)日：2020-03-19

申请号：US16564779

申请日：2019-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soon Mok HA ,  Jae-hee KIM ,  Yong-wook LEE ,  Yong-woo KIM

IPC: G03F1/42 ,  H01L21/027

Abstract: A photomask for negative-tone development (NTD) includes a main region, and a scribe lane region surrounding the main region and including a first lane and a second lane. The first and the second lane is provided at first opposite sides of each other with respect to the main region. The first lane includes a first sub-lane extending in a first direction and a second sub-lane that extending in the first direction. The first sub-lane includes a first dummy pattern and the second sub-lane includes a second dummy pattern. The first dummy pattern and the second dummy pattern are configured to radiate light exceeding a threshold dose of light to a first portion of a negative-tone photoresist provided under the first lane of the photomask.

公开(公告)号：US20180341172A1

公开(公告)日：2018-11-29

申请号：US15865636

申请日：2018-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-hee KIM ,  Chan HWANG

IPC: G03F1/26 ,  G03F1/36 ,  H01L29/41 ,  H01L21/311 ,  H01L21/283

Abstract: A method for fabricating a phase shift mask includes preparing a transmissive substrate on which a first mask region and a second mask region surrounding the first mask region are defined. In the first mask region, main patterns are formed having a first pitch in a first direction and a second direction perpendicular to the first direction. Each of the main patterns has a first area. In at least one row, assist patterns are formed at the first pitch to surround the main patterns. Each of the assist patterns has a second area less than the first area. In the second mask region, dummy patterns are formed in a plurality of rows. The dummy patterns surround the assist patterns at the first pitch. Each of the dummy patterns has a third area greater than the first area.