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    PROXIMITY CORRECTION METHODS FOR SEMICONDUCTOR MANUFACTURING PROCESSES
    2.
    发明申请
    PROXIMITY CORRECTION METHODS FOR SEMICONDUCTOR MANUFACTURING PROCESSES 有权

    公开(公告)号：US20210405521A1

    公开(公告)日：2021-12-30

    申请号：US17180984

    申请日：2021-02-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taehoon Kim ,  Jaeho Jeong ,  Jeonghoon Ko ,  Jongwon Kim ,  Yejin Jeong ,  Changwook Jeong

    IPC: G03F1/36 ,  G03F7/20 ,  H01L21/027

    Abstract: A proximity correction method for a semiconductor manufacturing process includes: generating a plurality of pieces of original image data from a plurality of sample regions, with the sample regions selected from layout data used in the semiconductor manufacturing process; removing some pieces of original image data that overlap with each other from the plurality of pieces of original image data, resulting in a plurality of pieces of input image data; inputting the plurality of pieces of input image data to a machine learning model; obtaining a prediction value of critical dimensions of target patterns included in the plurality of pieces of input image data from the machine learning model; measuring a result value for critical dimensions of actual patterns corresponding to the target patterns on a semiconductor substrate on which the semiconductor manufacturing process is performed; and performing learning of the machine learning model using the prediction value and the result value.

    Proximity correction methods for semiconductor manufacturing processes
    4.
    发明授权
    Proximity correction methods for semiconductor manufacturing processes 有权

    公开(公告)号：US11733603B2

    公开(公告)日：2023-08-22

    申请号：US17180984

    申请日：2021-02-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taehoon Kim ,  Jaeho Jeong ,  Jeonghoon Ko ,  Jongwon Kim ,  Yejin Jeong ,  Changwook Jeong

    IPC: G03F1/36 ,  H01L21/027 ,  G03F7/20 ,  G03F7/00

    CPC classification number: G03F1/36 ,  G03F7/70441 ,  G03F7/70625 ,  H01L21/027

    Abstract: A proximity correction method for a semiconductor manufacturing process includes: generating a plurality of pieces of original image data from a plurality of sample regions, with the sample regions selected from layout data used in the semiconductor manufacturing process; removing some pieces of original image data that overlap with each other from the plurality of pieces of original image data, resulting in a plurality of pieces of input image data; inputting the plurality of pieces of input image data to a machine learning model; obtaining a prediction value of critical dimensions of target patterns included in the plurality of pieces of input image data from the machine learning model; measuring a result value for critical dimensions of actual patterns corresponding to the target patterns on a semiconductor substrate on which the semiconductor manufacturing process is performed; and performing learning of the machine learning model using the prediction value and the result value.

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