公开(公告)号：US20230165158A1

公开(公告)日：2023-05-25

申请号：US18051857

申请日：2022-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Stuart Papworth Parkin ,  See-Hun Yang ,  Jiho Yoon ,  Ung Hwan Pi

IPC: H01L29/82 ,  G11C11/16

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L27/222 ,  G11C11/161

Abstract: A magnetic memory device includes a conductive line extending in a first direction, and a magnetic track extending in the first direction on the conductive line. The magnetic track includes a lower magnetic layer, a spacer layer and an upper magnetic layer sequentially stacked on the conductive line, and a non-magnetic pattern on the spacer layer and adjacent a side of the upper magnetic layer. The non-magnetic pattern vertically overlaps with a portion of the lower magnetic layer. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer.

公开(公告)号：US20230165164A1

公开(公告)日：2023-05-25

申请号：US18050600

申请日：2022-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Stuart Papworth Parkin ,  See-Hun Yang ,  Jiho Yoon ,  Ung Hwan Pi

IPC: H10N52/80 ,  H10B61/00 ,  H10N52/00

CPC classification number: H01L43/04 ,  H01L27/222 ,  H01L43/06

Abstract: A magnetic memory device includes a magnetic track extending in a first direction. The magnetic track includes a lower magnetic layer, an upper magnetic layer on the lower magnetic layer, a non-magnetic pattern on the lower magnetic layer and at a side of the upper magnetic layer, and a spacer layer between the lower magnetic layer and the upper magnetic layer and extending between the lower magnetic layer and the non-magnetic pattern. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer. The non-magnetic pattern has a first surface and a second surface which are opposite to each other in a second direction perpendicular to the first direction. A junction surface between the non-magnetic pattern and the upper magnetic layer is inclined with respect to a reference surface perpendicular to the first surface and the second surface.

公开(公告)号：US20230165161A1

公开(公告)日：2023-05-25

申请号：US17983554

申请日：2022-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Stuart Papworth Parkin ,  See-Hun Yang ,  Jiho Yoon ,  Ung Hwan Pi

IPC: H01L43/02 ,  H01L27/22

CPC classification number: H01L43/02 ,  H01L27/222

Abstract: A magnetic memory device may include a magnetic track that extends in a first direction. The magnetic track may include a lower magnetic layer that extends in the first direction, an upper magnetic layer that extends in the first direction on the lower magnetic layer, a spacer layer that extends in the first direction between the lower magnetic layer and the upper magnetic layer, and a non-magnetic pattern that penetrates the upper magnetic layer and is on the spacer layer. The non-magnetic pattern has a first junction surface that is in contact with a first portion of the upper magnetic layer, and a second junction surface that is in contact with a second portion of the upper magnetic layer. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer.